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Nexperia Resistor-Equipped NPN Transistor, 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC114YQB-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTC114YQB-QZ
Mount Type Surface
Series PDTC114Y
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 250MHz

Key Features

  • Maximum DC collector current rating of 100 mA ensures suitable current capacity.
  • Collector-emitter voltage maximum of 50 V for reliable switching performance.
  • Comes in ultra-small 3-pin DFN1110D-3 surface mount package with side-wettable flanks.
  • Built-in resistors simplify circuit design and reduce component count.
  • Supports maximum transition frequency up to 250 MHz for high-speed switching.
  • Operates reliably in temperature range from -55°C to 150°C.
  • Meets RoHS compliance and automotive standard AEC-Q101 specifications.
  • Ideal as cost-saving alternative for BC857 series in controlling IC inputs and switching loads.

Product Description

Nexperia PDTC114YQB-QZ is a resistor-equipped NPN bipolar transistor packaged in an ultra-small leadless 3-pin DFN1110D-3 (SOT8015) surface mount device. Featuring a plastic package with side-wettable flanks, it facilitates ease of manufacturing and inspection through automatic optical inspection (AOI).

This transistor supports a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V, making it suitable for a variety of low-power switching and amplification applications.

The integrated resistors reduce the overall component count and simplify circuit design, lowering picking and placing costs, which is advantageous in industrial and embedded digital applications.

Operating at high frequencies up to 250 MHz and capable of handling emitter-base voltages up to 6 V, it sustains reliable performance across broad temperature ranges from -55°C to 150°C, meeting the rigorous automotive standard AEC-Q101.

The PDTC114YQB-QZ offers a cost-effective alternative to the BC857 series, especially for digital circuits requiring compact and efficient transistor solutions, including controlling integrated circuit inputs and switching various loads.

Maximum collector current: 100 mA. Maximum collector-emitter voltage: 50 V. Package type: 3-Pin DFN1110D-3 surface mount device. Transition frequency: Up to 250 MHz. Operating temperature range: -55°C to 150°C. RoHS compliant and meets automotive AEC-Q101 standard.

This product suits applications in industrial automation, automotive electronics, digital signal switching, and other high-reliability semiconductor uses requiring integrated resistor-equipped transistors.

Explore more Bipolar Transistors and semiconductor components at EnvMart to meet your engineering requirements.

Nexperia Resistor-Equipped NPN Transistor, 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC114YQB-QZ
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Frequently Asked Questions

The maximum DC collector current rating of this transistor is 100 mA.

The collector-emitter voltage maximum for this model is 50 V, ensuring reliable switching performance.

It comes in an ultra-small 3-pin DFN1110D-3 surface mount package with side-wettable flanks.

This transistor supports a maximum transition frequency of up to 250 MHz, suitable for high-speed switching applications.

It operates reliably within a temperature range from -55°C to 150°C.

Yes, it meets the automotive standard AEC-Q101, ensuring compliance for automotive applications.

The built-in resistors simplify circuit design and reduce the overall component count, which can lower manufacturing costs.

The maximum emitter-base voltage for this model is 6 V.

This model uses an NPN transistor configuration.

The minimum DC current gain (hFE) for this transistor is 100.

This transistor is suitable for applications in industrial automation, automotive electronics, and digital signal switching.

The country of origin for this model is India.

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