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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.1mm |
| Length | 8.1mm |
| Model | IPL60R285P7AUMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | 600V CoolMOS CFD7 |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 285mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 59W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPL60R285P7AUMA1 is a 600V CoolMOS CFD7 N-Channel MOSFET designed for industrial and electronic applications requiring efficient switching and robustness. It provides a continuous drain current of 13 amperes and supports a maximum drain-source voltage of 600 volts. Packaged in a 5-pin ThinPAK surface mount format, it combines low gate charge and low on-resistance to maximize efficiency.
This MOSFET is the successor to Infineon's CoolMOS P6 series and is optimized for hard and soft switching applications such as power factor correction (PFC) and LLC resonant converters. It ensures excellent commutation ruggedness, low ringing tendency, and outstanding body diode robustness against hard commutation. Furthermore, it has excellent ESD capability with a robustness of over 2kV human body model.
The device supports operation over a wide temperature range from -55°C to 150°C and features a maximum power dissipation of 59 watts, making it suitable for demanding industrial environments. Its typical gate charge of 18nC allows for fast switching speeds while maintaining low switching and conduction losses, resulting in improved efficiency and cooler operation of power circuits.
The package dimensions are 8.1mm in length, 8.1mm in height, and 1.1mm in width, enabling compact PCB designs. It is a surface-mount device intended for high-reliability power electronics, industrial machinery, HVAC systems, electric vehicles, and renewable energy converters.
Supports maximum continuous drain current of 13 amperes. Maximum drain-source voltage rating is 600 volts. Packaged in a ThinPAK surface mount with 5 pins. Features low maximum drain-source resistance of 285 milliohms. Operates with enhancement-type N-channel channel mode.
Maximum gate-source voltage is rated at 20 volts. Typical gate charge at Vgs is 18 nanocoulombs, supporting fast switching. Maximum power dissipation of 59 watts ensures robust operation. Operates in temperature range from -55°C to 150°C.
Delivers high ESD robustness and excellent switching efficiency.
This product is ideal for applications in industrial power management, electronic power supplies, motor drives, and advanced switching converters. Its robust characteristics and optimized switching make it well-suited for use in laboratory instruments, construction machinery electronics, HVAC control, water treatment systems, and manufacturing equipment requiring high efficiency and reliability.
Explore the range of Infineon semiconductors and MOSFETs at EnvMart for cutting-edge electronic components and power solutions.
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