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Infineon N-Channel MOSFET, 381 A, 40 V, 8-Pin SuperSO8 5 x 6, Surface Mount BSC021N08NS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC021N08NS5ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 381 A supports high power applications.
- Drain-source voltage rating of 40 V ensures effective operation in low voltage circuits.
- 8-Pin SuperSO8 5 x 6 mm surface mount package for compact PCB design.
- Low maximum drain-source resistance of 0.7 mΩ reduces power loss and heat generation.
- Maximum power dissipation of 81 W allows for efficient thermal performance.
- Gate charge typical value of 80 nC at Vgs enhances switching efficiency.
- Operating temperature range from -55°C to 175°C ensures durability in harsh environments.
- Maximum gate-source voltage rating of 20 V protects against voltage spikes.
Product Description
Infineon BSC021N08NS5ATMA1 is a high-performance N-Channel MOSFET designed specifically for power applications requiring high current capability and low voltage operation. This MOSFET comes in an 8-pin SuperSO8 5 x 6 mm surface mount package, which enables compact and efficient PCB layouts ideal for server, desktop, and industrial applications.
The device features a maximum continuous drain current of 381 A and a low drain-source resistance of 0.7 milliohms, offering minimal conduction losses and improved thermal management. It supports a maximum drain-source voltage of 40 V, making it suitable for synchronous rectification in power supply designs.
With a maximum power dissipation of 81 W and an operating temperature range from -55°C to 175°C, this MOSFET withstands demanding environmental conditions. Its typical gate charge of 80 nC at rated gate voltage ensures fast switching with reduced losses. The device also has a maximum gate-source voltage of 20 V and a forward voltage of 1 V, balancing performance and protection.
This component complies with RoHS standards, aligning with environmental and safety regulations. It is optimal for use in industrial, computing, and power management applications needing efficient and reliable operation.
The package dimensions and pin count allow easy integration with automated manufacturing and surface-mount technology processes. This makes it an excellent choice for engineers designing power-efficient systems with high reliability requirements.
Maximum continuous drain current of 381 A supports high power applications. Low maximum drain-source resistance of 0.7 milliohms reduces conduction losses. Compact 8-pin SuperSO8 5 x 6 mm surface mount package design. Maximum power dissipation of 81 W for effective thermal handling.
Operating temperature range from -55°C up to 175°C ensures durability. Typical gate charge of 80 nC at rated gate voltage supports efficient switching. Maximum gate-source voltage rating of 20 V protects against voltage spikes.
Forward voltage drop of 1 V enables synchronous rectification. Compliant with RoHS directive for environmental standards.
This Infineon MOSFET is ideal for use in industrial, laboratory, power supply, server, and desktop computing environments needing high efficiency and robust power switching. Designed for surface mount assembly, it fits modern manufacturing lines well.
Explore more advanced MOSFET options and semiconductor components for precise power management and electronic switching needs within the wider Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 381 A, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 40 V, ideal for low voltage circuits.
It comes in an 8-pin SuperSO8 5 x 6 mm surface mount package, which allows for compact PCB designs.
The maximum power dissipation is 81 W, which contributes to effective thermal performance.
The typical gate charge for this MOSFET is 80 nC at Vgs, enhancing switching efficiency.
It operates within a temperature range of -55°C to 175°C, ensuring durability in harsh environments.
The maximum gate-source voltage rating for this model is 20 V, which protects against voltage spikes.
The maximum drain-source resistance is 0.7 mΩ, which helps reduce conduction losses.
This component complies with RoHS standards, aligning with environmental and safety regulations.
It is optimal for use in industrial, computing, and power management applications requiring efficient operation.
The forward voltage drop for this model is 1 V, enabling synchronous rectification in power supply designs.
This model features an 8-pin configuration, facilitating easy integration into automated manufacturing processes.
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