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Infineon 700V CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin IPAK IPSA70R360P7SAKMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.3mm
Length 6.6mm
Model IPSA70R360P7SAKMA1
Width 6.1mm
Mount Type Through Hole
Series 700V CoolMOS P7
Maximum Operating Temperature 150°C
Package Type IPAK
Minimum Operating Temperature -40°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 12.5A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 360mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 59.5W
Typical Gate Charge Qg @ Vgs 16.4nC
Maximum Gate Source Voltage Vgs 16V
Forward Voltage Vf 900mV

Key Features

  • This MOSFET features a maximum drain-source voltage of 700 V for high voltage applications.
  • It supports a continuous drain current of up to 12.5 A.
  • The device uses a 3-pin IPAK through-hole package for easy PCB mounting.
  • It has a low maximum drain-source resistance of 360 mΩ to ensure efficient power handling.
  • The maximum power dissipation is rated at 59.5 W, providing robust thermal capability.
  • The device operates across a temperature range from -40°C to 150°C.
  • Features typical gate charge of 16.4 nC at Vgs for efficient switching.
  • Maximum gate-source voltage is 16 V, suitable for standard gate drive voltages.

Product Description

Infineon IPSA70R360P7SAKMA1 is a 700V CoolMOS P7 series N-Channel Enhancement MOSFET designed for efficient switching in high voltage power applications. It is ideal for use in low power switch-mode power supplies (SMPS), mobile phone chargers, and notebook adapters, where compact size and high performance are essential.

The device supports a continuous drain current of 12.5 A combined with a maximum drain-source voltage of 700 V, offering reliable operation under demanding electrical conditions. Its 3-pin IPAK through-hole package allows for straightforward PCB mounting and thermal management.

This MOSFET features a low maximum drain-source resistance of 360 mΩ, ensuring lower conduction losses and improved efficiency. The maximum power dissipation of 59.5 W enables robust thermal performance in a compact form factor.

The product operates across a wide temperature range from -40°C to 150°C, making it reliable for industrial, consumer electronics, and automotive power management applications. With a typical gate charge of 16.4 nC at Vgs and a maximum gate-source voltage of 16 V, it supports efficient and effective switching control.

Dimensions of the IPAK package are 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height, making it compact and suitable for space-constrained designs. The forward voltage is rated at 900 mV, keeping conduction losses minimal.

This MOSFET provides high ESD ruggedness and durability. It belongs to the 700V CoolMOS P7 series designed for the low power SMPS market. The IPAK package type enhances thermal performance and PCB assembly convenience. Useful in electronic, industrial, and automotive power management environments.

The device supports enhancement mode operation for versatile applications.

For advanced power switching solutions and higher efficiency with reliability, Infineon IPSA70R360P7SAKMA1 is an excellent choice. It is supplied new and ready for integration in critical electronic designs. Explore more products in the MOSFET category at EnvMart for comprehensive electronic components solutions.

Infineon 700V CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin IPAK IPSA70R360P7SAKMA1
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Frequently Asked Questions

The maximum drain-source voltage of this model is 700 V, making it suitable for high voltage applications.

This unit supports a continuous drain current of up to 12.5 A.

It uses a 3-pin IPAK through-hole package for easy PCB mounting.

The maximum power dissipation for this MOSFET is rated at 59.5 W, providing robust thermal capability.

The maximum gate-source voltage for this model is 16 V, which is suitable for standard gate drive voltages.

It has a typical gate charge of 16.4 nC at Vgs, which aids in efficient switching.

This device operates across a temperature range from -40°C to 150°C, making it versatile for various applications.

The dimensions of the IPAK package are 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height.

The maximum drain-source resistance of this model is 360 mΩ, which helps ensure efficient power handling.

It is ideal for low power switch-mode power supplies (SMPS), mobile phone chargers, and notebook adapters.

This model features an N-channel type, which is common for enhancement mode operation.

The country of origin for this MOSFET is India.

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