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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | IPSA70R360P7SAKMA1 |
| Width | 6.1mm |
| Mount Type | Through Hole |
| Series | 700V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12.5A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 360mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 59.5W |
| Typical Gate Charge Qg @ Vgs | 16.4nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 900mV |
Infineon IPSA70R360P7SAKMA1 is a 700V CoolMOS P7 series N-Channel Enhancement MOSFET designed for efficient switching in high voltage power applications. It is ideal for use in low power switch-mode power supplies (SMPS), mobile phone chargers, and notebook adapters, where compact size and high performance are essential.
The device supports a continuous drain current of 12.5 A combined with a maximum drain-source voltage of 700 V, offering reliable operation under demanding electrical conditions. Its 3-pin IPAK through-hole package allows for straightforward PCB mounting and thermal management.
This MOSFET features a low maximum drain-source resistance of 360 mΩ, ensuring lower conduction losses and improved efficiency. The maximum power dissipation of 59.5 W enables robust thermal performance in a compact form factor.
The product operates across a wide temperature range from -40°C to 150°C, making it reliable for industrial, consumer electronics, and automotive power management applications. With a typical gate charge of 16.4 nC at Vgs and a maximum gate-source voltage of 16 V, it supports efficient and effective switching control.
Dimensions of the IPAK package are 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height, making it compact and suitable for space-constrained designs. The forward voltage is rated at 900 mV, keeping conduction losses minimal.
This MOSFET provides high ESD ruggedness and durability. It belongs to the 700V CoolMOS P7 series designed for the low power SMPS market. The IPAK package type enhances thermal performance and PCB assembly convenience. Useful in electronic, industrial, and automotive power management environments.
The device supports enhancement mode operation for versatile applications.
For advanced power switching solutions and higher efficiency with reliability, Infineon IPSA70R360P7SAKMA1 is an excellent choice. It is supplied new and ready for integration in critical electronic designs. Explore more products in the MOSFET category at EnvMart for comprehensive electronic components solutions.
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