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onsemi Transistor Small Signal NPN 600 mA Max DC Collector Current 40 V Max Collector Emitter Voltage 3-Pin TO-92 KSP2222ABU
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.95mm |
| Length | 5.2mm |
| Model | KSP2222ABU |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | KSP2222A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 35 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 75V |
| Maximum Power Dissipation Pd | 625mW |
| Maximum DC Collector Current Idc | 600mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 300MHz |
| Magnatec BC109 NPN Bipolar Transistor, 100 mA, 20 V, 3-Pin TO-18Brand | Magnatec |
| STMicroelectronics BC107B NPN Bipolar Transistor, 100 mA, 45 V, 3-Pin TO-18Brand | STMicroelectronics |
Key Features
- This transistor supports a maximum collector current of 600 mA for moderate current applications.
- It features a maximum collector-emitter voltage rating of 40 V ensuring stable operation within these limits.
- The TO-92 through-hole package provides ease of mounting on printed circuit boards.
- It has a minimum DC current gain (hFE) of 35 for amplification tasks.
- The device operates safely up to a maximum frequency of 300 MHz, suitable for high-speed switching.
- The maximum power dissipation of 625 mW allows reliable thermal handling in typical usage.
- Operating temperature range from 0°C to 150°C ensures device performance in varied environments.
- Three-pin configuration is standard for small signal transistors making it versatile in discrete circuit applications.
Product Description
The onsemi KSP2222ABU is a small signal NPN transistor designed for general purpose amplification and switching applications. It offers a collector current of up to 600 mA and a collector-emitter voltage rating of 40 V, making it ideal for medium power tasks in electronics and prototyping.
Encapsulated in a 3-pin TO-92 package, this transistor supports through-hole mounting, providing convenience for manual and automated PCB assembly. Its minimum DC current gain of 35 supports efficient signal amplification for both industrial and laboratory circuits.
With a maximum transition frequency of 300 MHz, the KSP2222ABU transistor enables high-speed switching required in communication and signal processing modules. The maximum power dissipation rating of 625 mW ensures the device can handle thermal loads effectively in typical operating conditions.
The transistor operates reliably within a temperature range of 0°C to 150°C, suitable for use in various climatic and operational environments including industrial and electronic manufacturing sectors.
This transistor supports a maximum collector current of 600 mA for moderate current applications. It provides a maximum collector-emitter voltage rating of 40 V for stable operation. TO-92 package enables easy through-hole mounting on PCBs.
Minimum DC current gain (hFE) of 35 ensures adequate amplification. Operates up to a maximum frequency of 300 MHz suitable for high-speed circuits. Maximum power dissipation of 625 mW allows reliable thermal management. Suitable for operating temperatures from 0°C to 150°C for diverse environments.
Standard 3-pin configuration fits most discrete transistor applications.
The onsemi KSP2222ABU bipolar junction transistor is widely used in electronic components for industrial manufacturing, laboratory equipment, HVAC controls, and telecommunications. Its robust specifications and reliable packaging make it a preferred choice for designers and engineers.
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Frequently Asked Questions
The KSP2222ABU transistor supports a maximum collector current of 600 mA, making it suitable for moderate current applications.
This model features a maximum collector-emitter voltage rating of 40 V, ensuring stable operation within this limit.
The KSP2222ABU is encapsulated in a TO-92 package, which allows for through-hole mounting on printed circuit boards.
It has a minimum DC current gain (hFE) of 35, which supports efficient amplification tasks.
The KSP2222ABU operates safely up to a maximum frequency of 300 MHz, making it suitable for high-speed switching applications.
The dimensions of this model are 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width.
It operates reliably within a temperature range of 0°C to 150°C, suitable for various environments.
The maximum power dissipation of the KSP2222ABU is 625 mW, allowing for effective thermal management during operation.
This unit features a single transistor configuration, typical for discrete applications.
The maximum emitter-base voltage (VEBO) for the KSP2222ABU is 6 V.
The KSP2222ABU is an NPN bipolar transistor, commonly used for amplification and switching.
This transistor is widely used in general-purpose amplification and switching applications in industrial and laboratory settings.
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