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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.05mm |
| Length | 6mm |
| Model | DMTH43M8LPS-13 |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | DMT |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerDI5060 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 82A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 38.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
DiodesZetex DMTH43M8LPS-13 is an advanced N-Channel Enhancement Mode Power MOSFET designed to deliver high current capability and superior switching performance under demanding conditions. It features a maximum continuous drain current of 82 A and a maximum drain-source voltage of 40 V, housed in a compact PowerDI5060 8-pin surface mount package measuring 6 mm in length, 5.1 mm in width, and just 1.05 mm in height.
Engineered to minimize on-state losses, this MOSFET offers an exceptionally low maximum drain-source resistance (Rds(on)) of 5 mΩ, ensuring efficient power handling and thermal performance. With a maximum power dissipation of 83 W and the capability to operate safely up to 175°C ambient temperature, it is ideal for high-temperature environments.
This device is capable of 100% unclamped inductive switching which provides enhanced robustness and reliability in end applications. The typical gate charge is 38.5 nC at the gate-source voltage, enabling fast switching speeds, suitable for high-efficiency power management systems.
Applications include brushless DC (BLDC) motors, DC-DC converters, and load switching circuits in automotive and industrial sectors. The package is designed for surface mounting, providing ease of integration into sophisticated electronic assemblies.
The DMTH43M8LPS-13 meets automotive industry standards with AEC-Q101 certification, assuring quality and reliability for automotive-grade usage. Manufactured in China, it is a product designed to meet demanding semiconductor requirements in power electronics.
This MOSFET supports a maximum continuous drain current of 82 A. It operates with a maximum drain-source voltage of 40 V in a PowerDI5060 package. Low on-state resistance (5 mΩ) reduces conduction losses. Maximum power dissipation rating of 83 W ensures reliable operation.
Operating temperature range from -55°C to 175°C. Typical gate charge of 38.5 nC at specified gate-source voltage. Eight pins for surface mount applications. 100% unclamped inductive switching capability for robustness. Complies with automotive standard AEC-Q101 for quality assurance.
EnvMart provides this component with detailed specifications and quality assurance, ideal for engineers and designers working in electronics, automotive, industrial, and power management engineering fields. Explore the Power MOSFET category for related components and advanced semiconductor solutions.
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