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DiodesZetex N-Channel Enhancement Mode Power MOSFET 40 V, 82 A, 83 W PowerDI5060 Package DMTH43M8LPS-13

Category Power MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.05mm
Length 6mm
Model DMTH43M8LPS-13
Width 5.1mm
Mount Type Surface
Series DMT
Maximum Operating Temperature 175°C
Package Type PowerDI5060
Minimum Operating Temperature -55°C
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 82A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 83W
Typical Gate Charge Qg @ Vgs 38.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET supports a maximum continuous drain current of 82 A.
  • It operates with a maximum drain-source voltage of 40 V in a PowerDI5060 package.
  • The device features low on-state resistance (5 mΩ) to minimize conduction losses.
  • Designed for high ambient temperatures with a maximum operating temperature of 175°C.
  • It has a maximum power dissipation rating of 83 W ensuring reliable operation.
  • The MOSFET offers fast switching with a typical gate charge of 38.5 nC at Vgs.
  • With a robust design including 100% unclamped inductive switching capability.
  • Pin count is 8 for surface mount installation.

Product Description

DiodesZetex DMTH43M8LPS-13 is an advanced N-Channel Enhancement Mode Power MOSFET designed to deliver high current capability and superior switching performance under demanding conditions. It features a maximum continuous drain current of 82 A and a maximum drain-source voltage of 40 V, housed in a compact PowerDI5060 8-pin surface mount package measuring 6 mm in length, 5.1 mm in width, and just 1.05 mm in height.

Engineered to minimize on-state losses, this MOSFET offers an exceptionally low maximum drain-source resistance (Rds(on)) of 5 mΩ, ensuring efficient power handling and thermal performance. With a maximum power dissipation of 83 W and the capability to operate safely up to 175°C ambient temperature, it is ideal for high-temperature environments.

This device is capable of 100% unclamped inductive switching which provides enhanced robustness and reliability in end applications. The typical gate charge is 38.5 nC at the gate-source voltage, enabling fast switching speeds, suitable for high-efficiency power management systems.

Applications include brushless DC (BLDC) motors, DC-DC converters, and load switching circuits in automotive and industrial sectors. The package is designed for surface mounting, providing ease of integration into sophisticated electronic assemblies.

The DMTH43M8LPS-13 meets automotive industry standards with AEC-Q101 certification, assuring quality and reliability for automotive-grade usage. Manufactured in China, it is a product designed to meet demanding semiconductor requirements in power electronics.

This MOSFET supports a maximum continuous drain current of 82 A. It operates with a maximum drain-source voltage of 40 V in a PowerDI5060 package. Low on-state resistance (5 mΩ) reduces conduction losses. Maximum power dissipation rating of 83 W ensures reliable operation.

Operating temperature range from -55°C to 175°C. Typical gate charge of 38.5 nC at specified gate-source voltage. Eight pins for surface mount applications. 100% unclamped inductive switching capability for robustness. Complies with automotive standard AEC-Q101 for quality assurance.

EnvMart provides this component with detailed specifications and quality assurance, ideal for engineers and designers working in electronics, automotive, industrial, and power management engineering fields. Explore the Power MOSFET category for related components and advanced semiconductor solutions.

DiodesZetex N-Channel Enhancement Mode Power MOSFET 40 V, 82 A, 83 W PowerDI5060 Package DMTH43M8LPS-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 82 A.

It can operate with a maximum drain-source voltage of 40 V.

The maximum drain-source resistance (Rds(on)) is 5 mΩ, which helps minimize conduction losses.

The maximum power dissipation rating is 83 W, ensuring reliable operation.

The operating temperature range is from -55°C to 175°C.

The typical gate charge is 38.5 nC at the specified gate-source voltage.

This model features a pin count of 8 for surface mount installation.

It is housed in a PowerDI5060 package, measuring 6 mm in length, 5.1 mm in width, and 1.05 mm in height.

It complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.

The channel type is N-Channel Enhancement Mode, designed for high current capability.

It is suitable for applications including brushless DC (BLDC) motors, DC-DC converters, and load switching circuits in automotive and industrial sectors.

This model is manufactured in China.

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