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onsemi Dual N-Channel MOSFET 26 A, 60 V Enhancement, 8-Pin DFN Package NVMFD5C680NLT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.05mm
Length 6.1mm
Model NVMFD5C680NLT1G
Width 5.1mm
Mount Type Surface
Series NVMFD5C680NL
Maximum Operating Temperature 175°C
Package Type DFN
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 26A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 41mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 19W
Typical Gate Charge Qg @ Vgs 5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.9V
Transistor Configuration Dual

Key Features

  • Features dual N-channel enhancement mode MOSFET transistors in a compact 8-pin DFN package.
  • Maximum continuous drain current of 26 amperes for robust power handling.
  • Maximum drain-source voltage of 60 volts supports various electronic circuits.
  • Low drain-source resistance (41 milliohms) minimizes conduction loss.
  • High maximum power dissipation of 19 watts ensures thermal durability.
  • Wide operating temperature range from -55°C to 175°C for automotive-grade reliability.
  • Typical gate charge of 5 nanocoulombs reduces switching losses.
  • Compliant with automotive standard AEC-Q101 certification.

Product Description

onsemi NVMFD5C680NLT1G is a dual N-channel power MOSFET designed to deliver high efficiency and reliability in automotive and industrial applications. Its 8-pin DFN surface mount package is optimized for compact, space-saving designs and high thermal performance.

With a maximum continuous drain current of 26 A and a drain-source voltage rating of 60 V, this MOSFET supports demanding switching applications including solenoid drivers, motor controls, and power converters. The low drain-source resistance (41 mΩ) minimizes conduction losses, enhancing the overall system efficiency. Its typical gate charge of 5 nC further reduces driver losses for faster switching and lower power consumption.

The device operates reliably across a wide temperature range from -55°C to 175°C and meets the automotive standard AEC-Q101, ensuring suitability for harsh automotive environments and extended operational life. The package dimensions (5.1 mm width x 6.1 mm length x 1.05 mm height) allow for compact PCB layouts.

This transistor configuration includes two elements per chip, providing dual functionality in a single component, enabling reduced parts count and streamlined designs. Compact 8-pin DFN package for surface mount applications.

High current capability with 26 A maximum drain current. Endurance for automotive-grade temperature range and certification. Low Rds(on) and gate charge for efficient operation. Dual transistor configuration for flexible circuit design.

Typical forward voltage of 0.9 V enhances switching performance. Maximum gate-source voltage of ±20 V protects device integrity. Maximum power dissipation of 19 W supports demanding loads. Wettable flank option available for enhanced optical inspection and assembly quality.

This onsemi MOSFET is ideal for industrial, automotive, and power management applications including solenoid drivers, low and high-side switches, automotive engine controllers, and antilock braking systems. Its reliability and performance suit use in construction machinery, manufacturing equipment, and other heavy-duty electronics.

For professionals seeking robust, high-performance MOSFETs in compact packages, the onsemi NVMFD5C680NLT1G offers an excellent solution with automotive certification and advanced electrical characteristics.

Explore more industrial semiconductors and discrete components available in our Electronics & Electricals category at EnvMart.

onsemi Dual N-Channel MOSFET 26 A, 60 V Enhancement, 8-Pin DFN Package NVMFD5C680NLT1G
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Frequently Asked Questions

The maximum continuous drain current for the NVMFD5C680NLT1G is 26 amperes.

This model has a maximum drain-source voltage rating of 60 volts.

The NVMFD5C680NLT1G comes in an 8-pin DFN package with dimensions of 5.1 mm width, 6.1 mm length, and 1.05 mm height.

It operates reliably across a wide temperature range from -55°C to 175°C.

The low drain-source resistance of 41 milliohms minimizes conduction losses, enhancing overall system efficiency.

The typical gate charge for the NVMFD5C680NLT1G is 5 nanocoulombs, which helps reduce switching losses.

This model is compliant with the automotive standard AEC-Q101, ensuring its suitability for automotive applications.

The maximum power dissipation for this MOSFET is 19 watts, supporting demanding loads.

It is suitable for applications such as solenoid drivers, motor controls, and power converters in automotive and industrial settings.

The typical forward voltage for the NVMFD5C680NLT1G is 0.9 volts, enhancing switching performance.

This MOSFET configuration includes two elements per chip, providing dual functionality in a single component.

The maximum gate-source voltage for the NVMFD5C680NLT1G is ±20 volts, which protects device integrity.

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