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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NVMFD5C680NLT1G |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NVMFD5C680NL |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 26A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 41mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 19W |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
| Transistor Configuration | Dual |
onsemi NVMFD5C680NLT1G is a dual N-channel power MOSFET designed to deliver high efficiency and reliability in automotive and industrial applications. Its 8-pin DFN surface mount package is optimized for compact, space-saving designs and high thermal performance.
With a maximum continuous drain current of 26 A and a drain-source voltage rating of 60 V, this MOSFET supports demanding switching applications including solenoid drivers, motor controls, and power converters. The low drain-source resistance (41 mΩ) minimizes conduction losses, enhancing the overall system efficiency. Its typical gate charge of 5 nC further reduces driver losses for faster switching and lower power consumption.
The device operates reliably across a wide temperature range from -55°C to 175°C and meets the automotive standard AEC-Q101, ensuring suitability for harsh automotive environments and extended operational life. The package dimensions (5.1 mm width x 6.1 mm length x 1.05 mm height) allow for compact PCB layouts.
This transistor configuration includes two elements per chip, providing dual functionality in a single component, enabling reduced parts count and streamlined designs. Compact 8-pin DFN package for surface mount applications.
High current capability with 26 A maximum drain current. Endurance for automotive-grade temperature range and certification. Low Rds(on) and gate charge for efficient operation. Dual transistor configuration for flexible circuit design.
Typical forward voltage of 0.9 V enhances switching performance. Maximum gate-source voltage of ±20 V protects device integrity. Maximum power dissipation of 19 W supports demanding loads. Wettable flank option available for enhanced optical inspection and assembly quality.
This onsemi MOSFET is ideal for industrial, automotive, and power management applications including solenoid drivers, low and high-side switches, automotive engine controllers, and antilock braking systems. Its reliability and performance suit use in construction machinery, manufacturing equipment, and other heavy-duty electronics.
For professionals seeking robust, high-performance MOSFETs in compact packages, the onsemi NVMFD5C680NLT1G offers an excellent solution with automotive certification and advanced electrical characteristics.
Explore more industrial semiconductors and discrete components available in our Electronics & Electricals category at EnvMart.
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