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Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD80R1K4P7ATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 32W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 900mV |
Key Features
- Maximum continuous drain current of 4 A enables reliable power handling.
- Operating voltage up to 800 V suitable for high-voltage applications.
- Enhancement mode channel type ensures efficient switching performance.
- Compact TO-252 package with surface mount design for easy PCB integration.
- Maximum power dissipation of 32 W provides effective thermal handling.
- Wide operating temperature range from -55°C to 150°C for diverse environments.
- Typical gate charge of 10 nC at Vgs enables fast switching capability.
- Maximum gate-source voltage rating of ±30 V enhances device safety margins.
Product Description
Infineon IPD80R1K4P7ATMA1 is a CoolMOS P7 series N-Channel MOSFET designed for high efficiency and thermal performance at 4 A continuous drain current and 800 V drain-source voltage. Packaged in a 3-Pin TO-252 surface mount package, it is optimized for use in power adapters, LED lighting, audio equipment, industrial power supplies, and auxiliary power circuits.
This MOSFET features enhancement mode operation, enabling precise and efficient switching with a typical gate charge of 10 nC at Vgs. It supports a maximum power dissipation of 32 W and a wide operating temperature range from -55°C to 150°C, making it suitable for demanding industrial and commercial applications.
The device also offers a maximum gate-source voltage capability of ±30 V and a low forward voltage drop of 900 mV, optimizing energy efficiency and circuit protection. Its compact dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height allow for space-saving PCB layouts.
Infineon CoolMOS P7 MOSFETs are known for enhancing power density and system cost-effectiveness. This part is ideal for designers requiring reliable, high-quality MOSFETs for industrial, laboratory, manufacturing, and commercial electronics applications.
Maximum continuous drain current of 4 A enables reliable power handling. Operating voltage up to 800 V suitable for high-voltage applications. Enhancement mode channel type ensures efficient switching performance. Compact TO-252 package with surface mount design for easy PCB integration.
Maximum power dissipation of 32 W provides effective thermal handling. Wide operating temperature range from -55°C to 150°C for diverse environments. Typical gate charge of 10 nC at Vgs enables fast switching capability.
Maximum gate-source voltage rating of ±30 V enhances device safety margins. Low forward voltage of 900 mV helps reduce conduction losses. Compact dimensions: Length 6.73 mm, Width 6.22 mm, Height 2.41 mm. Explore the extensive Infineon MOSFET portfolio on EnvMart for enhanced design flexibility and performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A, enabling reliable power handling in various applications.
This MOSFET can handle a maximum drain-source voltage of 800 V, making it suitable for high-voltage applications.
The typical gate charge at Vgs for this model is 10 nC, allowing for fast switching capabilities.
It has a maximum power dissipation rating of 32 W, which provides effective thermal handling during operation.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
This MOSFET operates within a temperature range of -55°C to 150°C, suitable for diverse environmental conditions.
It features an N-channel type, which is designed for enhancement mode operation, ensuring efficient switching performance.
The maximum gate-source voltage rating for this device is ±30 V, enhancing its safety margins during operation.
This model is optimized for use in power adapters, LED lighting, audio equipment, industrial power supplies, and auxiliary power circuits.
The forward voltage drop is 900 mV, which helps to reduce conduction losses in the circuit.
The TO-252 package of this MOSFET has a pin count of 3, facilitating its integration into PCB layouts.
This model belongs to the CoolMOS P7 series, known for enhancing power density and system cost-effectiveness.
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