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Infineon HEXFET N-Channel MOSFET 25A 200V Enhancement Mode 3-Pin TO-220 IRFB5620PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.67mm |
| Model | IRFB5620PBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 73mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 14W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This N-channel enhancement-mode MOSFET supports robust power switching applications.
- The device features a low 73 milliohm on-state resistance for efficient conduction.
- It has a maximum power dissipation rating of 14 watts.
- The gate-to-source voltage tolerance is ±20 volts for reliable switching control.
- Operating temperature range spans from -55°C to 175°C for extreme environment use.
- Standard TO-220 package facilitates heat sinking and PCB mounting.
- Typical gate charge of 25 nanocoulombs enables controlled switching speeds.
- Designed for motor drivers, switch-mode power supplies, and power conversion circuits.
Product Description
Infineon IRFB5620PBF HEXFET N-Channel MOSFET is a high-voltage, enhancement-mode semiconductor switch designed for through-hole power applications with a maximum continuous drain current of 25 amperes and a drain-source voltage up to 200 volts. Encased in a TO-220 package, it allows straightforward mounting and effective thermal management via heatsinks or PCBs.
This MOSFET offers low conduction losses with a 73 milliohm on-resistance and supports moderate power dissipation up to 14 watts, making it suitable for industrial electronics and power control systems. The ±20 volts maximum gate-to-source voltage rating ensures protection against overdrive during switching operations.
Operating reliably across an extended temperature range of -55°C to 175°C, the IRFB5620PBF is ideal for demanding environments such as motor driver stages, inverter-leg switching, audio amplifier outputs, and general-purpose power switching on through-hole boards.
A typical gate charge of 25 nanocoulombs enables efficient switching speed control in power electronics applications. Its N-channel enhancement-mode characteristics require a positive gate voltage for activation, suitable for both low-side and high-side switching configurations when driven correctly.
This MOSFET supports industrial, laboratory, and manufacturing equipment in power supply regulation and amplification roles. TO-220 package simplifies heat dissipation and mechanical mounting, facilitating system integration.
The device is robust for use in switch-mode power supplies and high-voltage motor driver stages. Packaging and pin count facilitate standard through-hole circuit assembly. Designed for extended operational durability in commercial and industrial power electronics.
Explore further Electronic Components and MOSFET selections at EnvMart for engineered solutions tailored to your industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for the IRFB5620PBF is 25 amperes.
This MOSFET can handle a maximum drain-source voltage of 200 volts.
The on-state resistance for this model is 73 milliohms, which allows for efficient conduction.
The maximum power dissipation rating for the IRFB5620PBF is 14 watts.
The operating temperature range for the IRFB5620PBF spans from -55°C to 175°C.
This model is encased in a TO-220 package, which facilitates heat sinking and PCB mounting.
The typical gate charge for this MOSFET is 25 nanocoulombs, enabling controlled switching speeds.
The maximum gate-to-source voltage tolerance is ±20 volts.
This MOSFET has a pin count of 3.
The IRFB5620PBF features an N-channel enhancement mode.
The forward voltage for the IRFB5620PBF is 1.3 volts.
This MOSFET is suitable for applications such as motor drivers, switch-mode power supplies, and power conversion circuits.
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