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DiodesZetex PNP General Purpose Transistor, 500 mA, 80 V, 3-Pin SOT-23 MMBTA56-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model MMBTA56-7-F
Width 2.5mm
Mount Type Surface
Series MMBT
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -4V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz

Key Features

  • The transistor features a low power dissipation rating of 300 mW for efficient thermal management.
  • Surface mount design allows for compact PCB layout and automated assembly.
  • The device operates reliably between temperatures of -55°C to 150°C.
  • It exhibits a minimum DC current gain (hFE) of 100 and a maximum transition frequency of 50 MHz.
  • Complies with the automotive standard AEC-Q101 ensuring robustness in automotive applications.
  • The compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height facilitate versatile use in space-constrained designs.
  • Ideal for general-purpose PNP switching and amplification in electronic circuits.

Product Description

DiodesZetex MMBTA56-7-F is a general-purpose PNP bipolar junction transistor offering robust electrical characteristics for reliable performance in electronic circuits. Featuring a maximum collector current of 500 mA and maximum collector-emitter voltage of 80 V, this transistor operates effectively in a variety of applications including switching and amplification.

The transistor is encapsulated in a compact 3-pin SOT-23 surface mount package, supporting efficient PCB space usage and automated manufacturing processes. Its low power dissipation of 300 mW enables stable operation without excessive heat buildup under normal load conditions.

This device supports a wide operating temperature range from -55°C to 150°C, making it suitable for demanding industrial and automotive environments. With a minimum DC current gain of 100 and a maximum transition frequency of 50 MHz, it provides solid signal amplification capabilities for mid-frequency applications.

Certified to the automotive AEC-Q101 standard, MMBTA56-7-F offers increased reliability and durability necessary for automotive electronics and high-reliability industrial uses.

Mechanical dimensions are 3 mm length, 2.5 mm width, and 1.1 mm height, making integration into compact designs straightforward. The transistor’s maximum emitter-base voltage is -4 V and maximum collector-base voltage is -80 V, supporting versatile circuit configurations.

The transistor features a low power dissipation rating of 300 mW for efficient thermal management. Surface mount design allows for compact PCB layout and automated assembly. Wide operating temperature range from -55°C to 150°C ensures application flexibility.

Minimum DC current gain (hFE) of 100 enables effective signal amplification. Maximum transition frequency (ft) of 50 MHz suitable for mid-frequency electronics. AEC-Q101 automotive standard certified for robustness and reliability.

Compact SOT-23 3-pin package suitable for dense circuit layouts.

This transistor is ideal for industrial, automotive, and general electronic system use, providing a reliable switching and amplification component for a broad range of designs. Explore more DiodesZetex Bipolar Transistors and related semiconductor components through EnvMart’s comprehensive catalog for your next project.

DiodesZetex PNP General Purpose Transistor, 500 mA, 80 V, 3-Pin SOT-23 MMBTA56-7-F
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Frequently Asked Questions

The maximum collector current for this transistor is 500 mA.

The maximum collector-emitter voltage (Vceo) is -80 V.

It has a minimum DC current gain (hFE) of 100.

The maximum transition frequency (ft) is 50 MHz.

This transistor operates reliably between temperatures of -55°C to 150°C.

The transistor features a low power dissipation rating of 300 mW.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It is encapsulated in a compact 3-pin SOT-23 surface mount package.

The MMBTA56-7-F complies with the automotive standard AEC-Q101.

The maximum emitter-base voltage (VEBO) is -4 V.

This model features a single transistor configuration.

The transistor polarity is PNP.

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