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DiodesZetex PNP Transistor 1 A 80 V 3-Pin SOT-89 Surface Mount BCX5316TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.6mm
Length 4.6mm
Model BCX5316TA
Width 4.25mm
Mount Type Surface
Series BCX531
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 25
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -100V
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc -1A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz
Infineon BCX5316E6327 PNP Transistor, 1 A, 80 V, 3-Pin SOT-89Brand Infineon

Key Features

  • Maximum DC collector current of 1 ampere.
  • Collector emitter voltage rating of 80 volts.
  • Surface mount package type SOT-89 with 3 pins.
  • High transition frequency of 150 MHz supporting high-speed switching.
  • Wide operating temperature range from -55°C to 150°C.
  • Maximum power dissipation of 1 watt for reliable performance.
  • Transistor configured as a single PNP device.
  • Designed with automotive standards AEC-Q200, AEC-Q101, and AEC-Q100 compliance.

Product Description

DiodesZetex BCX5316TA is a general purpose PNP bipolar transistor designed for electronic and industrial applications requiring reliable switching and amplification. Featuring a maximum DC collector current of 1 ampere and a collector emitter voltage rating of 80 V, this transistor operates effectively within a broad temperature range from -55°C to 150°C. Its compact SOT-89 surface mount package with 3 pins allows easy assembly on PCBs for space-sensitive designs.

This transistor offers a maximum power dissipation of 1 watt and a high transition frequency of 150 MHz, supporting high-speed switching in automotive, industrial, and consumer electronic circuits. It complies with automotive quality standards including AEC-Q200, AEC-Q101, and AEC-Q100, making it suitable for harsh environments and reliability-critical applications.

The BCX5316TA features a minimum DC current gain (hFE) of 25 and transistor polarity PNP, optimized for various bipolar transistor circuit configurations. Its compact dimensions (4.6 mm length, 4.25 mm width, and 1.6 mm height) enable versatile use in modern electronic assemblies.

Maximum DC collector current: 1 A. Collector emitter voltage max: 80 V. Surface mount package type SOT-89 with 3 pins. High transition frequency: 150 MHz. Operating temperature range: -55°C to 150°C. Power dissipation maximum: 1 W.

Complies with automotive AEC-Q200, AEC-Q101, and AEC-Q100 quality standards. Compact size perfect for industrial and automotive electronics.

This transistor is ideal for use in industrial, automotive, and consumer electronic systems requiring robust, low power switching and amplification. It supports efficient PCB mounting and high reliability in demanding environments.

Explore more semiconductors and transistors in our Electronics & Electricals catalog on EnvMart to find compatible and complementary components for your projects.

Explore more products in our Bipolar Transistors category.

DiodesZetex PNP Transistor 1 A 80 V 3-Pin SOT-89 Surface Mount BCX5316TA
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Frequently Asked Questions

The maximum DC collector current of the BCX5316TA is 1 ampere.

The collector-emitter voltage rating for this transistor is 80 volts.

This transistor has a high transition frequency of 150 MHz, supporting high-speed switching applications.

The operating temperature range for the BCX5316TA is from -55°C to 150°C.

It is packaged in a surface mount SOT-89 type with 3 pins.

The dimensions of this model are 4.6 mm in length, 4.25 mm in width, and 1.6 mm in height.

The minimum DC current gain (hFE) of the BCX5316TA is 25.

Yes, it complies with automotive quality standards including AEC-Q200, AEC-Q101, and AEC-Q100.

The maximum power dissipation for the BCX5316TA is 1 watt.

This transistor is configured as a single PNP device.

The maximum emitter-base voltage (VEBO) for this model is -5 volts.

This transistor is suitable for industrial, automotive, and consumer electronic applications requiring reliable switching and amplification.

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