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Infineon HEXFET N-Channel MOSFET 60 A 250 V Enhancement 3-Pin TO-220 IRFB4332PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB4332PBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 390W |
| Typical Gate Charge Qg @ Vgs | 99nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
Key Features
- N-channel enhancement mode for precise switching applications.
- High maximum power dissipation of 390 W for reliable operation under load.
- Low on-resistance (33 mΩ) ensures efficient current flow and minimal heat generation.
- Large operating temperature range from -40°C to 175°C supporting diverse environments.
- Maximum gate-source voltage rating of ±30 V enhances versatility and durability.
- Compact 3-pin TO-220 package suitable for through-hole mounting installations.
- Typical gate charge of 99 nC enabling fast switching and response.
- Forward voltage of 1.3 V optimizing conduction efficiency.
Product Description
Infineon IRFB4332PBF HEXFET N-Channel MOSFET is designed for high-performance power switching applications with a maximum continuous drain current of 60 A and a drain-source voltage of 250 V. Its enhancement mode operation and advanced HEXFET technology enable efficient, reliable performance in demanding environments.
The 3-pin TO-220 package supports easy through-hole mounting, making it highly compatible with various PCB designs in industrial and automation control systems.
This device offers a low on-resistance of 33 mΩ, which reduces power loss and improves heat management. With a maximum power dissipation rating of 390 W, it can maintain stable operation under significant load conditions, provided adequate cooling is applied.
The operating temperature range from -40°C to 175°C allows usage in diverse environments, including industrial automation, energy recovery systems, and electronic equipment requiring high current capacity and switching efficiency.
N-channel enhancement mode configuration for efficient current flow. Maximum continuous drain current of 60 A for strong performance. Low on-resistance reduces heat generation and energy loss. Wide operating voltage and temperature ranges.
TO-220 through-hole package for versatile mounting. Suitable for automation controls and plasma display panels. Forward voltage of 1.3 V supporting efficient conduction. Typical gate charge of 99 nC for rapid switching response.
This MOSFET is ideal for integration into energy recovery systems, pass switches in space-constrained designs, and high-current automation controls. Infineon's HEXFET series emphasizes quality and performance for modern electronic systems.
Explore more Infineon semiconductor components and MOSFETs in our Electronics & Electricals category at EnvMart to find suitable devices tailored to specific application needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 60 A, allowing it to handle significant power loads effectively.
This MOSFET has a maximum drain-source voltage rating of 250 V, making it suitable for high-voltage applications.
The on-resistance of this model is 33 mΩ, which helps reduce power loss and heat generation during operation.
It comes in a TO-220 package and is designed for through-hole mounting, facilitating easy integration into various PCB designs.
The operating temperature range for this unit is from -40°C to 175°C, allowing it to function in diverse environments.
The typical gate charge for this model is 99 nC, enabling fast switching and response times in applications.
The forward voltage for this device is 1.3 V, which optimizes conduction efficiency during operation.
This model has a maximum power dissipation rating of 390 W, allowing for reliable operation under load with adequate cooling.
The IRFB4332PBF features a 3-pin configuration, which is standard for its package type.
This device utilizes an N-channel configuration, which is typical for enhancement mode MOSFETs.
The maximum gate-source voltage ratings for this model are ±30 V, enhancing its versatility and durability in various applications.
This MOSFET is manufactured in India, ensuring compliance with local production standards.
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