World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi N-Channel Enhancement MOSFET 210 mA 50 V 3-Pin SC-70 BSS138W

Free Delivery in India | Lowest Global Shipping Charges

onsemi N-Channel Enhancement MOSFET 210 mA 50 V 3-Pin SC-70 BSS138W

Name: onsemi N-Channel Enhancement MOSFET 210 mA 50 V 3-Pin SC-70 BSS138W
Brand: onsemi
SKU: 394375
Price: 0.18 USD
Availability: InStock



Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.9mm
Length	2mm
Model	BSS138W
Width	1.25mm
Mount Type	Surface
Series	BSS138W
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	210mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	340mW
Typical Gate Charge Qg @ Vgs	1.1nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.4V

Key Features

Packaged in a compact SC-70 3-pin surface mount package.
Maximum power dissipation of 340 mW appropriate for low power switching.
Low typical gate charge of 1.1 nC allows for efficient high-speed switching.
Operating temperature range from -55°C to 150°C for robust industrial applications.
Low maximum drain-source resistance of 6 ohms enhances conduction efficiency.
Designed using Fairchild’s proprietary high cell density DMOS technology for ruggedness and reliability.
Maximum gate-source voltage rating of -20 V to +20 V ensures easy gate drive control.
Ideal for electronic, power, and discrete semiconductor applications requiring compact and efficient switching devices.

Product Description

onsemi BSS138W is a high-performance N-Channel enhancement mode MOSFET designed for efficient switching in compact electronic circuits. Featuring a maximum continuous drain current of 210 mA and a drain-source voltage rating of 50 V, this device supports low power dissipation applications up to 340 mW.

Encapsulated in a 3-pin SC-70 surface mount package measuring 2 mm in length, 1.25 mm in width, and 0.9 mm in height, this transistor is suitable for densely packed printed circuit boards. Its low typical gate charge of 1.1 nC allows for fast switching speeds with minimal power loss.

Operating reliably over a wide temperature range from -55°C to 150°C, the BSS138W ensures durability in demanding environments. Its maximum drain-source resistance of 6 ohms contributes to efficient conduction, making it a robust choice for industrial, electronic, power management, and discrete semiconductor applications.

This MOSFET incorporates advanced DMOS technology by Fairchild Semiconductor, delivering ruggedness and high cell density to minimize on-state resistance and enhance performance. The gate-source voltage rating of -20 to +20 V provides flexible control capabilities.

Compact SC-70 3-pin surface mount package for space-saving designs. High continuous drain current of 210 mA for moderate load switching. Maximum voltage rating of 50 V suitable for low voltage circuits. Low gate charge for efficient switching and reduced power consumption.

Wide operating temperature range ensures reliable operation in various conditions. Low drain-source resistance improves circuit efficiency. Fairchild’s DMOS technology underlying manufacturing process.

The onsemi BSS138W MOSFET is extensively used in electronic components, power management modules, and discrete semiconductor applications, suitable for both industrial and commercial electronics.

Explore more MOSFETs and discrete semiconductor products in the Electronics & Electricals category on EnvMart.