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Infineon SIPMOS Type P-Channel MOSFET 170 mA 60 V Enhancement 3-Pin SOT-23 BSS84PH6327XTSA2

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Infineon SIPMOS Type P-Channel MOSFET 170 mA 60 V Enhancement 3-Pin SOT-23 BSS84PH6327XTSA2

Name: Infineon SIPMOS Type P-Channel MOSFET 170 mA 60 V Enhancement 3-Pin SOT-23 BSS84PH6327XTSA2
Brand: Infineon
SKU: 394328
Price: 0.08 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	0.9mm
Length	2.9mm
Model	BSS84PH6327XTSA2
Width	1.3mm
Mount Type	Surface
Series	SIPMOS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	170mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	12Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	360mW
Typical Gate Charge Qg @ Vgs	1nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.24V

Key Features

Provides 60 V maximum drain source voltage for high-voltage switching applications.
Supports 170 mA maximum continuous drain current for low-current loads.
Features 12Ω maximum drain source resistance enabling controlled conduction.
Has a typical gate charge of 1nC, reducing drive energy and switching losses.
Packaged in compact 3-pin SOT-23 surface mount package suitable for compact board layouts.
Operates across a wide temperature range from -55°C to 150°C for demanding environments.
Meets automotive-grade AEC-Q101 standard for reliable automotive module use.
Maximum power dissipation of 360mW allows modest power handling in small footprint.

Product Description

Infineon BSS84PH6327XTSA2 is a SIPMOS Series P-Channel MOSFET offering 60 V drain-source voltage and 170 mA continuous drain current in a 3-Pin SOT-23 surface mount package. This enhancement mode transistor is optimized for low-power switching applications in compact electronic assemblies requiring efficient performance on a small footprint.

This MOSFET features a relatively low maximum on-resistance (Rds) of 12Ω, coupled with a typical gate charge of 1nC at Vgs, which enables low switching losses and reduced drive energy consumption. Its maximum power dissipation rating is 360mW, allowing for moderate power applications.

Designed for operating temperatures from -55°C up to 150°C, it fulfills the automotive AEC-Q101 standard, making it suitable for automotive and industrial control modules that require durability under harsh temperature conditions. The gate-source voltage rating of ±20 V must be respected for device longevity.

Typical applications include battery protection, reverse-polarity switching, logic-level driver compatible switching in portable instrumentation, and power rail selection in space-constrained control boards. The compact SOT-23 package dimensions (length 2.9mm, width 1.3mm, height 0.9mm) facilitate dense PCB layouts.

60 V drain withstand for high-voltage capability. 12Ω Rds(on) optimizes conduction efficiency. 1nC gate charge minimizes switching losses. 170mA continuous drain current supports sustained loads. Surface mount SOT-23 3-pin package for compact designs.

AEC-Q101 certified for automotive grade reliability. Wide operating temperature: -55°C to 150°C. 360mW maximum power dissipation. Ideal for battery protection and reverse-polarity switching. Suitable for portable instrumentation and power-rail control.

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