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Infineon HEXFET N-Channel MOSFET 32 A 100 V Enhancement Mode, 3-Pin TO-252 IRFR3411TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR3411TRPBF |
| Width | 7.49mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 32A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 44mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 130W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 32 A supports versatile power applications.
- Maximum drain-source voltage of 100 V ensures flexible operating conditions.
- Low on-resistance of 44 mΩ minimizes conduction losses and heat.
- High power dissipation capability of 130 W enhances durability.
- Surface mount TO-252 package simplifies PCB integration.
- Enhancement mode channel ensures efficient switching performance.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- Typical gate charge of 48 nC allows fast switching and low loss.
Product Description
Infineon IRFR3411TRPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor designed for industrial, automotive, and power management applications. Featuring a maximum continuous drain current of 32 A and a maximum drain-source voltage of 100 V, this enhancement mode MOSFET delivers efficient switching with low on-resistance of 44 milliohms, which reduces power loss and heat generation in demanding circuits.
The device is housed in a surface-mount TO-252 (DPAK) package with 3 pins, making it suitable for compact PCB layouts and surface mounting techniques such as vapor phase, infrared, or wave soldering. Its maximum power dissipation rating of 130 W supports robust operation under heavy loads.
Designed to operate in harsh environments, the IRFR3411TRPBF MOSFET supports a wide temperature range from -55°C to +175°C. Its typical gate charge of 48 nC at 10 V allows for fast switching speeds that improve circuit efficiency in power conversion and motor control tasks. It also handles pulsed drain currents up to 110 A, making it reliable under transient conditions.
32 A continuous drain current rating for versatile applications. 100 V maximum drain-source voltage offers flexible usage. 44 mΩ low on-resistance reduces power losses. 130 W power dissipation enhances reliability. TO-252 surface-mount package for easy PCB assembly.
Enhancement mode design for improved switching performance. Wide operating temperature range, -55°C to 175°C. Typical gate charge of 48 nC supports fast switching. Pulsed drain current capability of 110 A. Junction-to-case thermal resistance of 1.2 °C/W.
This MOSFET is ideal for use in DC-DC converters, motor control circuits in robotics and automation, power management in telecommunications equipment, and electronic lighting control systems. Its robust design and temperature tolerance make it suitable for industrial and commercial electronics requiring efficient power switching and management.
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Frequently Asked Questions
The maximum continuous drain current for this model is 32 A, making it suitable for versatile power applications.
The maximum drain-source voltage is 100 V, allowing for flexible operating conditions in various applications.
This MOSFET features a low on-resistance of 44 mΩ, which minimizes conduction losses and heat generation.
The maximum power dissipation capability is 130 W, enhancing reliability under heavy loads.
It is housed in a surface-mount TO-252 package, which simplifies PCB integration.
The operating temperature range is from -55°C to +175°C, making it suitable for harsh environments.
The typical gate charge is 48 nC at 10 V, which allows for fast switching and low loss.
The dimensions are 6.73 mm in length, 7.49 mm in width, and 2.39 mm in height.
It can handle pulsed drain currents up to 110 A, ensuring reliability under transient conditions.
This model features an N-channel enhancement mode design, which provides efficient switching performance.
The maximum gate-source voltage is -20 V to +20 V, allowing for a range of control voltages.
It is ideal for use in DC-DC converters, motor control circuits, and power management in various electronic systems.
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