Infineon SIPMOS N-Channel MOSFET 280 mA 60 V Enhancement Mode 3-Pin SC-70 BSS138WH6433XTMA1

Infineon BSS138WH6433XTMA1 SIPMOS N-Channel MOSFET is a high-performance semiconductor device designed to provide reliable switching for low current applications in industrial, automotive, and consumer electronics. It features an enhancement mode channel type and is suitable for surface mount technology with a compact SC-70 package that has 3 pins. Its maximum continuous drain current is 280 mA at a maximum drain-source voltage rating of 60 V, offering efficiency and robustness.

The transistor's maximum power dissipation rating is 500 mW, supporting operation within a wide temperature range from -55°C up to 150°C. Its low resistance of 3.5 Ω between the drain and source minimizes energy loss, enhancing overall circuit efficiency. The device complies with the automotive AEC-Q101 standard, assuring suitability for automotive electronic systems requiring stringent qualification.

The BSS138WH6433XTMA1 transistor incorporates a forward voltage (Vf) of 850 mV and a typical gate charge of 1 nC at the rated gate-source voltage, enabling low gate drive requirements and fast switching capabilities. Physical dimensions of the device are optimized for dense printed circuit board layouts.

This MOSFET is ideal for diverse applications including industrial automation, automotive electronics, power management systems, and consumer appliances. Its surface mount form factor and performance characteristics support efficient design integration and high reliability in demanding environments.

Operates in enhancement mode ensuring efficient switching performance. Housed in compact 3-pin SC-70 package suitable for space-constrained electronic circuits. Features a maximum drain-source resistance of 3.5 ohms for low power loss.

Handles power dissipation up to 500 mW with wide operating temperature range from -55°C to 150°C. Supports automotive industry standard AEC-Q101 for high reliability in harsh environments. Typical gate charge is approximately 1 nC enabling fast switching speeds.

Forward voltage drop is 850 mV for effective conduction. Dimensions are 2 mm length, 1.25 mm width, and 800 μm height.

Explore the Infineon MOSFET portfolio for more options in power control solutions suited to your industrial and automotive electronic requirements. EnvMart offers comprehensive MOSFET selections with detailed technical specifications to support professional design and manufacturing processes.