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onsemi Transistor, 100 mA NPN, 65 V, Surface Mount SOT-723, 3-Pin BC846BM3T5G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.55mm
Length 1.25mm
Model BC846BM3T5G
Width 0.85mm
Mount Type Surface
Series BC846BM3T5G
Maximum Operating Temperature 150°C
Package Type SOT-723
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V dc
Maximum Power Dissipation Pd 265mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • The transistor features a 3-pin SOT-723 package suitable for compact PCB layouts.
  • Maximum power dissipation is 265 mW supporting moderate power applications.
  • It offers a minimum DC current gain (hFE) of 200 ensuring efficient signal amplification.
  • Operates within an extended temperature range from -55°C to 150°C for reliable performance.
  • Maximum transition frequency of 100 MHz makes it suitable for high frequency switching.
  • The device has a maximum collector-base voltage rating of 80V DC and emitter-base voltage of 6V.
  • Compact dimensions of 1.25 mm length, 0.85 mm width, and 0.55 mm height enable space-saving designs.

Product Description

onsemi BC846BM3T5G is a high-performance NPN bipolar junction transistor designed primarily for general purpose switching and amplification in electronic circuits. Housed in a compact 3-pin SOT-723 surface mount package, its small form factor suits densely packed circuit boards in consumer, automotive, and industrial electronics.

With a maximum collector current of 100 mA and collector-emitter voltage rating of 65 V, this transistor supports a wide range of low power switching applications. The maximum power dissipation is rated at 265 mW, allowing the device to handle moderate power levels without performance degradation.

The device offers a minimum DC current gain (hFE) of 200, ensuring efficient current amplification. Its operation spans a broad temperature range from -55°C to 150°C, making it suitable for harsh environments and automotive-grade applications. The high maximum transition frequency of 100 MHz enables use in high-speed switching circuits.

The BC846BM3T5G also features maximum voltages of 80 V at collector-base and 6 V at emitter-base junctions, providing robust voltage tolerance. Its physical dimensions are 1.25 mm long, 0.85 mm wide, and 0.55 mm high, enabling compact electronic designs and minimizing board space requirement.

This NPN transistor is ideal for use in industrial control systems, power supplies, automotive electronics, consumer devices, and other general purpose amplification and switching tasks in semiconductor discrete component applications.

The transistor features a 3-pin SOT-723 package suitable for compact PCB layouts. Maximum power dissipation is 265 mW supporting moderate power applications. It offers a minimum DC current gain (hFE) of 200 ensuring efficient signal amplification.

Operates within an extended temperature range from -55°C to 150°C for reliable performance. Maximum transition frequency of 100 MHz makes it suitable for high frequency switching. The device has a maximum collector-base voltage rating of 80V DC and emitter-base voltage of 6V.

Compact dimensions of 1.25 mm length, 0.85 mm width, and 0.55 mm height enable space-saving designs. Explore the onsemi transistor range and other semiconductor products at EnvMart for your electronics design and manufacturing needs.

Explore more products in our Bipolar Transistors category.

onsemi Transistor, 100 mA NPN, 65 V, Surface Mount SOT-723, 3-Pin BC846BM3T5G
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Frequently Asked Questions

The maximum collector current for this transistor is 100 mA.

The maximum collector-emitter voltage rating for this model is 65 V.

It offers a minimum DC current gain (hFE) of 200, ensuring efficient signal amplification.

The dimensions of the SOT-723 package are 1.25 mm in length, 0.85 mm in width, and 0.55 mm in height.

The maximum power dissipation is rated at 265 mW, allowing it to handle moderate power levels.

This transistor operates within an extended temperature range from -55°C to 150°C.

The maximum transition frequency is 100 MHz, making it suitable for high-speed switching applications.

The maximum collector-base voltage rating is 80 V DC.

It is an NPN bipolar junction transistor designed for general purpose switching and amplification.

The BC846BM3T5G has a pin count of 3.

This model features a surface mount type suitable for compact PCB layouts.

The country of origin for this transistor is India.

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