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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 4mm |
| Model | FDS86141 |
| Width | 5mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 11.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 800mV |
onsemi FDS86141 PowerTrench N-Channel MOSFET is engineered to deliver reliable switching performance in electronic circuits with a maximum continuous drain current of 7 A and a drain-source voltage rating of 100 V. Its PowerTrench design provides low on-resistance and efficient thermal performance, making it suitable for power management applications.
This MOSFET is housed in a compact surface mount SOIC package with 8 pins, facilitating easy integration into printed circuit boards for modern electronics assembly. The device operates in enhancement mode, ensuring compatibility with standard gate drive voltages ranging from -20 V to +20 V.
The low typical forward voltage and gate charge values ensure minimal switching losses and fast response times, suitable for switching regulators, motor drives, load switches, and other power conversion circuits. Its extended operating temperature range from -55°C to 150°C qualifies it for use in industrial, automotive, and consumer electronics where robust environmental endurance is required.
With a maximum power dissipation rating of 5 W, the FDS86141 offers a balance of power and efficiency for medium power electronic control and switching roles. Supports continuous drain current up to 7 amperes for robust performance.
Maximum drain-source voltage rating of 100 volts ensures high voltage tolerance. PowerTrench technology optimizes conduction and switching losses. Surface mount SOIC package with 8 pins enables compact PCB designs. Low on-resistance of 40 milliohms reduces power dissipation.
Enhancement mode channel offers easy gate drive capabilities. Wide gate-source voltage range from -20V to +20V for flexibility. Typical gate charge of 11.8 nanocoulombs enables fast switching speeds. Operating temperature range from -55°C to 150°C for demanding environments.
Maximum power dissipation rating of 5 watts supports moderate power applications.
This MOSFET is widely applicable in industrial power supply circuits, automotive electronic modules, construction of efficient DC-DC converters, and various consumer electronics where compact and efficient switching elements are needed.
Explore the extensive range of semiconductors and discrete electronic components at EnvMart for industrial, laboratory, and commercial electronics projects.
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