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onsemi PowerTrench Type P-Channel MOSFET, 55 A, 35 V Enhancement Mode, 3-Pin TO-252 Package FDD6637
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD6637 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 35V |
| Maximum Drain Source Resistance Rds | 19mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -0.8V |
Key Features
- Supports high power dissipation of 57 W suitable for compact electronic designs.
- Enhancement mode with a channel resistance of 19mΩ ensures efficient switching.
- Maximum gate-source voltage ranges from -25 V to +25 V for versatile applications.
- Operates reliably across a wide temperature range from -55°C to 150°C.
- Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height allow easy PCB integration.
- Designed without automotive certification but engineered for robust semiconductor performance.
Product Description
onsemi FDD6637 PowerTrench Type P-Channel MOSFET is a high-performance semiconductor device designed for electronic and power management applications. This MOSFET supports a maximum continuous drain current (Id) of 55 A and a maximum drain-source voltage (Vds) of 35 V, which makes it ideal for demanding power switching tasks in industrial, automotive (non-certified), and consumer electronics.
The device features an enhancement mode channel type with low on-resistance (19mΩ), facilitating efficient power control with minimal conduction losses. Its TO-252 surface-mount package offers a compact footprint, aiding space-efficient PCB layouts while providing robust thermal performance with a maximum power dissipation of 57 W.
Operable within a temperature range from -55°C to 150°C and equipped with a maximum gate-source voltage of ±25 V, this MOSFET is well suited for applications exposed to harsh environments. Its typical gate charge of 45 nC promotes fast switching speeds beneficial for PWM and power conversion circuits.
Key industrial applications include power supplies, motor control, DC-DC converters, and switching circuits requiring reliable high-current, low-voltage switching elements. The device is engineered for optimal performance but does not carry automotive standards certification.
High continuous drain current of 55 A for robust power handling. Low drain-source resistance of 19mΩ enables efficient power conversion. Wide operating temperature range ensures durability in demanding conditions. Compact TO-252 package supports surface mounting and thermal management.
Enhancement mode channel suitable for power control applications.
This product is new and originates from India, intended for industrial, manufacturing, and electronic component usage. Explore more power semiconductors and MOSFETs at EnvMart to suit various technical needs.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A, making it suitable for robust power handling applications.
This MOSFET has a maximum drain-source voltage (Vds) rating of 35 V, allowing it to handle low-voltage switching tasks effectively.
The FDD6637 features a low drain-source resistance of 19 mΩ, which facilitates efficient power conversion with minimal conduction losses.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height, allowing for easy PCB integration.
It operates reliably across a wide temperature range from -55°C to 150°C, suitable for demanding environments.
The FDD6637 supports a maximum power dissipation of 57 W, which is beneficial for compact electronic designs requiring efficient thermal management.
The typical gate charge for the FDD6637 is 45 nC, which promotes fast switching speeds, advantageous for PWM and power conversion circuits.
This model has a maximum gate-source voltage range of -25 V to +25 V, providing versatility for various applications.
The FDD6637 is designed for surface mounting, which aids in space-efficient PCB layouts.
This MOSFET is suitable for applications including power supplies, motor control, DC-DC converters, and switching circuits requiring reliable high-current, low-voltage switching.
The FDD6637 features an enhancement mode channel type, which is suitable for power control applications.
This product originates from India, intended for industrial, manufacturing, and electronic component usage.
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