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DiodesZetex Silicon Junction Diode, Single, 1A Forward Current, 400V Peak Reverse Voltage, SMA Package ES1G-13-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 2.1mm
Length 4.6mm
Model ES1G-13-F
Width 2.92mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SMA
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 25ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 400V
onsemi 400 V 1 A Diode Fast Recovery 2-Pin DO-214AC ES1GBrand onsemi

Key Features

  • Single diode configuration for reliable switching applications.
  • Supports a maximum forward current of 1 ampere.
  • Peak reverse voltage rating is 400 volts ensuring high voltage tolerance.
  • Surface mount type with SMA package and 2 pins for easy PCB integration.
  • Peak reverse recovery time of 25 nanoseconds for efficient switching performance.
  • Wide operating temperature range from -55°C to 150°C suitable for harsh environments.
  • Maximum forward voltage drop of 1.25 volts for efficient conduction.
  • Capable of peak non-repetitive forward surge current of 30 amperes.

Product Description

DiodesZetex ES1G-13-F is a silicon junction switching diode designed for discrete semiconductor applications. It supports a maximum forward current of 1 ampere and can withstand peak reverse voltages up to 400 volts. The diode is housed in a compact SMA surface mount package with 2 pins, making it well suited for high-density circuit board assembly.

This diode features a fast peak reverse recovery time of 25 nanoseconds, enhancing switching efficiency in electronic circuits. Its maximum forward voltage drop is 1.25 volts, ensuring low power loss during conduction.

The operating temperature range of -55°C to 150°C allows it to perform reliably in demanding industrial, automotive, and commercial electronic environments. It can also handle peak non-repetitive surge currents of up to 30 amperes, providing robustness in transient conditions.

With its small form factor (4.6 mm length, 2.92 mm width, 2.1 mm height), the ES1G-13-F supports surface mount technology (SMT) manufacturing processes for modern electronics. The diode is ideal for use in power rectification, switching applications, and other semiconductor circuit components.

Industries that benefit from this component include automotive electronics, industrial automation, power supply manufacturing, and more. It enables designers to create efficient, high-performance electronic systems requiring reliable diode operation.

Single diode configuration for reliable switching applications. Supports a maximum forward current of 1 ampere. Peak reverse voltage rating is 400 volts ensuring high voltage tolerance. Surface mount type with SMA package and 2 pins for easy PCB integration.

Peak reverse recovery time of 25 nanoseconds for efficient switching performance. Compact dimensions: length 4.6 mm, width 2.92 mm, height 2.1 mm. Wide operating temperature range from -55°C to 150°C suitable for harsh environments.

Maximum forward voltage drop of 1.25 volts for efficient conduction. Capable of peak non-repetitive forward surge current of 30 amperes. Explore the complete DiodesZetex diode range and related discrete semiconductor components at EnvMart for your industrial and commercial electronics applications.

Explore more products in our Switching Diodes category.

DiodesZetex Silicon Junction Diode, Single, 1A Forward Current, 400V Peak Reverse Voltage, SMA Package ES1G-13-F
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Frequently Asked Questions

The maximum forward current for this diode is 1 ampere.

The peak reverse voltage rating of the ES1G-13-F is 400 volts.

This diode has dimensions of 4.6 mm in length, 2.92 mm in width, and 2.1 mm in height.

The peak reverse recovery time for this model is 25 nanoseconds.

This diode uses an SMA surface mount package with 2 pins.

The maximum forward voltage drop for this diode is 1.25 volts.

The operating temperature range for the ES1G-13-F is from -55°C to 150°C.

The peak non-repetitive forward surge current rating is 30 amperes.

This diode is suitable for power rectification, switching applications, and other semiconductor circuit components.

The ES1G-13-F has a single diode configuration.

Industries that benefit from this diode include automotive electronics, industrial automation, and power supply manufacturing.

The ES1G-13-F is manufactured in India.

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