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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5mm |
| Model | FDMS86104 |
| Width | 6mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 73W |
| Typical Gate Charge Qg @ Vgs | 11.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
onsemi FDMS86104 PowerTrench N-Channel MOSFET is engineered for power efficiency and durability in electronic applications requiring fast switching and low losses. It supports a continuous drain current of 16 A and a drain-source voltage rating of 100 V, making it ideal for power management in commercial, industrial, and automotive electronics.
This device uses PowerTrench technology which ensures minimized power dissipation and improved thermal performance. Its compact 8-pin WDFN surface mount package allows designers to implement high-density solutions without compromising performance.
The MOSFET features a low maximum drain-source resistance of 40 milliohms, resulting in reduced conduction losses and enhanced energy efficiency. It operates in enhancement mode with an N-channel type, providing effective switching characteristics suitable for a wide variety of circuits.
The device comfortably handles power dissipation up to 73 watts and can reliably function within an ambient temperature range from -55°C to 150°C, making it suitable for harsh environments. Typical gate charge is 11.7 nanoCoulombs at the standard gate-source voltage, facilitating fast switching speeds. The maximum gate-source voltage ranges from -20 V to +20 V, providing a robust operational window.
Uses PowerTrench technology for lower conduction and switching losses. Compact 8-pin WDFN surface mount package for space-efficient PCB layouts. Can dissipate up to 73 W power, suitable for demanding applications. Wide operating temperature range of -55°C to 150°C ensures versatility.
Low Rds(on) of 40 mΩ reduces power loss during conduction. Enhancement mode N-channel construction for reliable switching. Typical gate charge of 11.7 nC supports rapid switching performance. Gate-source voltage rating of -20 V to +20 V offers protection and flexibility.
Dimensions optimized for compact electronic assemblies: 5 mm (length), 6 mm (width), 1.05 mm (height).
This MOSFET is suitable for use in industrial, commercial, laboratory, automotive, and power management electronics where high efficiency and reliability are required. It is a vital component for power converters, DC-DC regulators, and switching circuits.
Explore the full range of semiconductors and MOSFET devices available in EnvMart’s Electronics & Electricals category for compatible and complementary components.
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