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onsemi PowerTrench N-Channel MOSFET, 16 A Continuous Drain Current, 100 V Drain Source Voltage, 8-Pin WDFN Package FDMS86104

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.05mm
Length 5mm
Model FDMS86104
Width 6mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type WDFN
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 16A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 40mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 73W
Typical Gate Charge Qg @ Vgs 11.7nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Utilizes PowerTrench technology for optimized performance and lower losses.
  • Comes in a compact 8-pin WDFN surface mount package suitable for space-constrained designs.
  • Maximum power dissipation capability of 73 W supports demanding applications.
  • High maximum operating temperature up to 150°C ensures reliability under heat stress.
  • Low drain-source resistance of 40 mΩ minimizes conduction losses.
  • Operates with enhancement mode N-channel type for efficient switching.
  • Typical gate charge of 11.7 nC provides fast switching capabilities.
  • Wide operating voltage range, with maximum gate-source voltage from -20 V to +20 V.

Product Description

onsemi FDMS86104 PowerTrench N-Channel MOSFET is engineered for power efficiency and durability in electronic applications requiring fast switching and low losses. It supports a continuous drain current of 16 A and a drain-source voltage rating of 100 V, making it ideal for power management in commercial, industrial, and automotive electronics.

This device uses PowerTrench technology which ensures minimized power dissipation and improved thermal performance. Its compact 8-pin WDFN surface mount package allows designers to implement high-density solutions without compromising performance.

The MOSFET features a low maximum drain-source resistance of 40 milliohms, resulting in reduced conduction losses and enhanced energy efficiency. It operates in enhancement mode with an N-channel type, providing effective switching characteristics suitable for a wide variety of circuits.

The device comfortably handles power dissipation up to 73 watts and can reliably function within an ambient temperature range from -55°C to 150°C, making it suitable for harsh environments. Typical gate charge is 11.7 nanoCoulombs at the standard gate-source voltage, facilitating fast switching speeds. The maximum gate-source voltage ranges from -20 V to +20 V, providing a robust operational window.

Uses PowerTrench technology for lower conduction and switching losses. Compact 8-pin WDFN surface mount package for space-efficient PCB layouts. Can dissipate up to 73 W power, suitable for demanding applications. Wide operating temperature range of -55°C to 150°C ensures versatility.

Low Rds(on) of 40 mΩ reduces power loss during conduction. Enhancement mode N-channel construction for reliable switching. Typical gate charge of 11.7 nC supports rapid switching performance. Gate-source voltage rating of -20 V to +20 V offers protection and flexibility.

Dimensions optimized for compact electronic assemblies: 5 mm (length), 6 mm (width), 1.05 mm (height).

This MOSFET is suitable for use in industrial, commercial, laboratory, automotive, and power management electronics where high efficiency and reliability are required. It is a vital component for power converters, DC-DC regulators, and switching circuits.

Explore the full range of semiconductors and MOSFET devices available in EnvMart’s Electronics & Electricals category for compatible and complementary components.

onsemi PowerTrench N-Channel MOSFET, 16 A Continuous Drain Current, 100 V Drain Source Voltage, 8-Pin WDFN Package FDMS86104
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Frequently Asked Questions

The maximum continuous drain current for this model is 16 A.

It has a maximum drain-source voltage rating of 100 V.

The maximum power dissipation capability is 73 W, suitable for demanding applications.

The maximum drain-source resistance is 40 mΩ, which helps minimize conduction losses.

The typical gate charge is 11.7 nC, providing fast switching capabilities.

The dimensions of the package are 5 mm in length, 6 mm in width, and 1.05 mm in height.

It operates within a temperature range of -55°C to 150°C, ensuring reliability in harsh environments.

This model utilizes an enhancement mode N-channel type for efficient switching.

The maximum gate-source voltage is rated from -20 V to +20 V.

It is designed for surface mounting, making it suitable for space-constrained applications.

This MOSFET is suitable for industrial, commercial, automotive, and power management electronics.

The country of origin for this model is India.

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