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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 14A 500V Enhancement 3-Pin TO-263 STB14NK50ZT4

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 4.6mm
Length 10.4mm
Model STB14NK50ZT4
Width 9.35mm
Mount Type Surface
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 14A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 380mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 69nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • N-Channel enhancement mode MOSFET designed for surface mounting applications.
  • Offers low on-resistance with 380 mΩ maximum drain-source resistance.
  • Maximum power dissipation rated at 150W for efficient heat management.
  • Operates reliably in a temperature range from -55°C to 150°C.
  • Typical gate charge of 69nC at gate-source voltage, enabling fast switching.
  • Maximum gate-source voltage range from -30V to +30V for robust control.
  • Forward voltage approximately 1.6V supports efficient operation.

Product Description

STMicroelectronics STB14NK50ZT4 is a MDmesh SuperMESH N-Channel MOSFET designed for demanding industrial and electronic applications requiring high current and voltage handling capability.

This enhancement mode transistor features a continuous drain current of 14A and can tolerate a maximum drain-source voltage of 500V, making it ideal for switching and power regulation tasks in power supplies, motor controls, and industrial automation equipment.

Packaged in a TO-263 surface mount configuration with three pins, it facilitates easy integration into printed circuit boards. The device boasts low on-resistance of 380 milliohms, which minimizes power losses and enhances efficiency under load.

Thermal performance is robust, with a power dissipation rating of 150W and operating temperature range from -55°C to 150°C, suitable for harsh industrial environments.

The MOSFET features a typical gate charge of 69 nanocoulombs, enabling rapid switching speeds critical for high-frequency applications. The gate-source voltage tolerance of -30V to +30V ensures control circuit compatibility and protection against voltage spikes.

Physical dimensions include a length of 10.4mm, width of 9.35mm, and height of 4.6mm, allowing compact design layouts in electronic devices. N-Channel enhancement MOSFET for surface mount applications. Continuous drain current of 14A and voltage up to 500V.

Low 380mΩ on-resistance reduces conduction losses. 150W maximum power dissipation supports high-power tasks. Wide operating temperature range: -55°C to 150°C. Quick switching enabled by 69nC gate charge. Robust ±30V gate-source voltage rating.

Compact TO-263 package with 3 pins.

This MOSFET is suited for industrial electronics, power management systems, automotive electronics, and other sectors requiring reliable, high-efficiency semiconductor switching components.

Explore the Electronics & Electricals category at EnvMart for more high-quality semiconductor devices from leading brands like STMicroelectronics.

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 14A 500V Enhancement 3-Pin TO-263 STB14NK50ZT4
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Frequently Asked Questions

The maximum continuous drain current for this model is 14A.

It can tolerate a maximum drain-source voltage of 500V.

The maximum drain-source resistance is 380 milliohms.

The maximum power dissipation is rated at 150W.

It operates reliably in a temperature range from -55°C to 150°C.

The typical gate charge is 69 nanocoulombs at gate-source voltage.

It has a maximum gate-source voltage range from -30V to +30V.

The dimensions are 10.4mm in length, 9.35mm in width, and 4.6mm in height.

It is packaged in a TO-263 surface mount configuration with three pins.

This MOSFET is suitable for industrial electronics, power management systems, and automotive electronics.

It utilizes an N-Channel enhancement mode.

This model belongs to the MDmesh and SuperMESH series.

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