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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB14NK50ZT4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 380mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 69nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STB14NK50ZT4 is a MDmesh SuperMESH N-Channel MOSFET designed for demanding industrial and electronic applications requiring high current and voltage handling capability.
This enhancement mode transistor features a continuous drain current of 14A and can tolerate a maximum drain-source voltage of 500V, making it ideal for switching and power regulation tasks in power supplies, motor controls, and industrial automation equipment.
Packaged in a TO-263 surface mount configuration with three pins, it facilitates easy integration into printed circuit boards. The device boasts low on-resistance of 380 milliohms, which minimizes power losses and enhances efficiency under load.
Thermal performance is robust, with a power dissipation rating of 150W and operating temperature range from -55°C to 150°C, suitable for harsh industrial environments.
The MOSFET features a typical gate charge of 69 nanocoulombs, enabling rapid switching speeds critical for high-frequency applications. The gate-source voltage tolerance of -30V to +30V ensures control circuit compatibility and protection against voltage spikes.
Physical dimensions include a length of 10.4mm, width of 9.35mm, and height of 4.6mm, allowing compact design layouts in electronic devices. N-Channel enhancement MOSFET for surface mount applications. Continuous drain current of 14A and voltage up to 500V.
Low 380mΩ on-resistance reduces conduction losses. 150W maximum power dissipation supports high-power tasks. Wide operating temperature range: -55°C to 150°C. Quick switching enabled by 69nC gate charge. Robust ±30V gate-source voltage rating.
Compact TO-263 package with 3 pins.
This MOSFET is suited for industrial electronics, power management systems, automotive electronics, and other sectors requiring reliable, high-efficiency semiconductor switching components.
Explore the Electronics & Electricals category at EnvMart for more high-quality semiconductor devices from leading brands like STMicroelectronics.
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