onsemi PowerTrench N-Channel MOSFET 30 V, 13 A, Low Rds(on) 8 mΩ, 8-Pin SOIC FDS6670A

onsemi FDS6670A PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient switching and amplification in electronic circuits. The device is housed in a compact 8-pin SOIC surface mount package ideal for modern PCB layouts and industrial applications.

This MOSFET operates in enhancement mode with an N-type channel, offering a maximum continuous drain current of 13 Amperes and a drain to source voltage of 30 Volts, making it suitable for medium power switching applications. Its low maximum drain-source resistance of 8 milliohms minimizes conduction losses, improving overall circuit efficiency and thermal performance.

The transistor supports a wide operating temperature range from -55 degrees Celsius to 150 degrees Celsius, ensuring durability and reliable operation in demanding industrial and commercial environments. The gate-source voltage can vary between -20 and +20 Volts, allowing versatile interfacing and control in power management circuits.

Typical gate charge is 21 nanocoulombs at the specified gate voltage, enabling fast switching speeds, while the maximum power dissipation rating of 2.5 Watts supports moderate thermal requirements. With a low forward voltage drop of approximately 700 millivolts, the device reduces conduction losses in switching paths.

Physical dimensions of the MOSFET include a length of 5 millimeters, width of 4 millimeters, and a height of 1.5 millimeters, enabling high-density electronic assembly. This part complies with typical semiconductor standards but does not carry specific automotive approvals.

This onsemi PowerTrench MOSFET is commonly used in industrial electronics, power supply circuits, motor controllers, and other applications requiring efficient low-voltage switching devices.

Maximum continuous drain current of 13 Amperes ensures high current handling capability. Drain to source voltage rated at 30 Volts suitable for low voltage switching applications. Low maximum drain-source resistance of 8 milliohms improves efficiency and reduces power loss.

Surface mount 8-pin SOIC package enables compact PCB designs. Operation temperature range from -55°C to 150°C supports industrial environments. Typical gate charge of 21 nanocoulombs for fast switching performance. Maximum power dissipation of 2.5 Watts ensures reliable thermal management.

Forward voltage drop approximately 700 millivolts reduces conduction losses. Wide gate-source voltage range from -20 V to +20 V offers flexible control. Compact physical dimensions: length 5mm, width 4mm, height 1.5mm. Explore the onsemi MOSFET range and other semiconductor devices in the Electronics & Electricals category at EnvMart for professional industrial use.