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onsemi N-Channel Power MOSFET, 150 A, 60 V, Enhancement Mode, 5-Pin DFN Surface Mount NTMFS5C628NLT1G

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.05mm
Length 5.1mm
Model NTMFS5C628NLT1G
Width 6.1mm
Mount Type Surface
Series NTMFS
Maximum Operating Temperature 175°C
Package Type DFN
Minimum Operating Temperature -55°C
Pin Count 5
Channel Type N
Maximum Continuous Drain Current Id 150A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 3.3mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 52nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.8V

Key Features

  • High continuous drain current of 150 A enables heavy-duty load handling.
  • Maximum drain-source voltage of 60 V for versatile power management.
  • Low maximum drain-source resistance of 3.3 milliohms reduces conduction losses.
  • Compact 5-pin DFN package suitable for surface mounting on PCBs.
  • Improved thermal performance with maximum power dissipation of 110 W.
  • Wide operating temperature range from -55°C to 175°C for harsh environments.
  • Enhancement mode with typical gate charge of 52 nC ensures efficient switching.
  • Durable with maximum gate-source voltage rating of -20 V to +20 V.

Product Description

onsemi NTMFS5C628NLT1G is a high-performance N-Channel Power MOSFET designed for demanding industrial and electronic applications requiring efficient power delivery and tight thermal management. Rated for a continuous drain current of 150 A and a maximum drain-source voltage of 60 V, this device enables reliable operation in power switching and amplification circuits.

The 5-pin DFN (Dual Flat No-Lead) surface mount package facilitates compact circuit board layouts and ensures minimal parasitic inductance. With a low on-resistance (3.3 mΩ), the MOSFET reduces power losses, improving overall system efficiency and thermal reliability. Its enhanced mode channel provides controlled switching characteristics optimized for high-speed applications.

Operating over a wide temperature range (-55°C to 175°C), the device is suitable for industrial, automation, motor control, and power management systems requiring robust performance under harsh conditions. The gate charge of 52 nC and gate-source voltage limits (-20 to +20 V) provide safe and efficient driving capabilities.

The compact dimensions (5.1 mm length, 6.1 mm width, and 1.05 mm height) allow designers to save PCB space without compromising performance. Forward voltage drop of 0.8 V ensures efficient conduction when the device is on.

High continuous drain current for power applications. Low on-resistance reduces losses and heat. Compact 5-pin DFN surface mount package. Wide operating and storage temperature range. Suitable for industrial, automation, and power electronics.

This MOSFET is an ideal component for power supply modules, motor controllers, and electronic switching circuits used in industrial manufacturing, HVAC systems, laboratory instruments, and commercial electronics.

Explore more power semiconductors like the onsemi NTMFS5C628NLT1G and advanced MOSFETs in the onsemi range available on EnvMart for your industrial and electronic component needs.

onsemi N-Channel Power MOSFET, 150 A, 60 V, Enhancement Mode, 5-Pin DFN Surface Mount NTMFS5C628NLT1G
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Frequently Asked Questions

The maximum continuous drain current for the NTMFS5C628NLT1G is 150 A.

This model has a maximum drain-source voltage rating of 60 V.

The maximum drain-source resistance of this MOSFET is 3.3 milliohms, which helps reduce conduction losses.

The NTMFS5C628NLT1G comes in a compact 5-pin DFN package suitable for surface mounting on PCBs.

It operates over a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.

The typical gate charge for the NTMFS5C628NLT1G is 52 nC, which ensures efficient switching.

This MOSFET has dimensions of 5.1 mm in length, 6.1 mm in width, and 1.05 mm in height.

The maximum power dissipation for the NTMFS5C628NLT1G is 110 W.

The forward voltage drop when the device is on is 0.8 V.

The maximum gate-source voltage rating is -20 V to +20 V.

This MOSFET is suitable for applications in industrial manufacturing, motor control, and power management systems.

The NTMFS5C628NLT1G uses an N-channel configuration, which is typical for enhancement mode MOSFETs.

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