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Infineon LogicFET N-Channel MOSFET 17 A 100 V Enhancement 3-Pin TO-220 IRL530NPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRL530NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | LogicFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| IRL530NPBF N-Channel MOSFET, 17 A, 100 V LogicFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- This MOSFET uses enhancement mode channel type for reliable switching performance.
- It features a maximum drain-source resistance of 100 milliohms for efficient conduction.
- The device supports a maximum gate-source voltage of -16 V to +16 V.
- Maximum power dissipation capacity is rated at 79 watts with a temperature range of -55°C to 175°C.
- Typical gate charge at Vgs is 34 nanocoulombs for optimized gate drive.
- The package is designed for through-hole mounting on printed circuit boards.
- Physical dimensions are 10.54 mm length, 4.69 mm width, and 8.77 mm height.
- Industry-standard LogicFET series known for low conduction losses and high efficiency.
Product Description
Infineon IRL530NPBF is a LogicFET N-Channel MOSFET designed for power electronics applications that demand high current capability and efficient switching.
This MOSFET supports a maximum continuous drain current of 17 amperes and a maximum drain-source voltage of 100 volts, making it suitable for power management and control circuits.
The enhancement mode channel provides low on-resistance of approximately 100 milliohms, reducing conduction losses and improving overall system efficiency. Its TO-220 3-pin package ensures robust thermal dissipation and is suitable for through-hole mounting in industrial and commercial electronics assemblies.
The device maintains reliable operation across a wide temperature range of -55°C to 175°C, appropriate for harsh industrial environments. Typical gate charge is 34 nanocoulombs at the rated gate voltage, enabling efficient switching performance with low gate drive power requirements.
Applications include power supplies, motor control circuits, industrial automation, and general purpose high power switching. This MOSFET uses enhancement mode channel type for reliable switching performance. It features a maximum drain-source resistance of 100 milliohms for efficient conduction.
The device supports a maximum gate-source voltage of -16 V to +16 V. Maximum power dissipation capacity is rated at 79 watts with a temperature range of -55°C to 175°C. Typical gate charge at Vgs is 34 nanocoulombs for optimized gate drive.
Package type is TO-220, suitable for through-hole mounting. Physical dimensions: Length 10.54 mm, Width 4.69 mm, Height 8.77 mm. LogicFET series known for reduced conduction losses and power efficiency.
Manufactured in China under Infineon's quality standards, this MOSFET transistor offers reliable performance for electronic and electrical power applications in industrial, automotive, and consumer electronics systems.
Explore more semiconductor components and power MOSFETs on EnvMart for your design and engineering needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 amperes.
It supports a maximum drain-source voltage of 100 volts.
The typical gate charge at Vgs is 34 nanocoulombs.
The dimensions are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
The maximum power dissipation capacity is rated at 79 watts.
It can operate within a temperature range of -55°C to 175°C.
This MOSFET is designed for through-hole mounting.
The maximum gate-source voltage is -16 V to +16 V.
It features an N-channel type with enhancement mode.
The maximum drain-source resistance is approximately 100 milliohms.
It is suitable for applications such as power supplies, motor control circuits, and industrial automation.
This model belongs to the LogicFET series, known for low conduction losses and high efficiency.
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