Infineon HEXFET N-Channel MOSFET 57 A 100 V Enhancement Mode 3-Pin TO-220 IRF3710PBF

Infineon IRF3710PBF HEXFET N-Channel MOSFET 3-Pin TO-220 is a robust power semiconductor device engineered to provide high efficiency and reliable performance in industrial, automotive, and electronic applications. With its HEXFET technology, it achieves low on-resistance which reduces conduction losses and enhances energy efficiency.

This MOSFET features a maximum continuous drain current of 57 A and can operate under a maximum drain-source voltage of 100 V, making it suitable for high current power circuits and switching applications. The device supports enhancement mode operation for precise switching control and fast response.

Designed for through-hole mounting in a 3-pin TO-220 package, it simplifies installation and heat dissipation management. Its maximum power dissipation rating is 200 W, assisted by the compact package that allows efficient thermal conduction, supporting junction temperatures up to +175°C. This ensures durability even under demanding thermal conditions.

The gate charge specification of 130 nC at Vgs and gate-source voltage limits of -20 to +20 V contribute to fast switching capabilities and gate protection. The forward voltage drop of approximately 1.2 V ensures lower power loss during conduction, improving overall system performance.

Physical dimensions of approximately 10.54 mm in length, 8.77 mm in height, and 4.69 mm in width make this device compatible with various board layouts and thermal designs. Its tolerance to a temperature range from -55°C minimum operating temperature further extends its application versatility.

Common applications include automotive power management systems, motor control circuits, industrial automation equipment, and power supply units where efficiency, switching speed, and thermal reliability are critical.

Utilizes HEXFET technology for low on-resistance and high efficiency. Supports a maximum continuous drain current of 57 amperes. Designed to operate with a drain-source voltage up to 100 volts. Provides enhancement mode channel operation for precise switching control.

Comes in a 3-pin TO-220 through-hole mounting package. Rated for 200 W maximum power dissipation with effective thermal management. Operates reliably within a temperature range from -55°C to +175°C junction temperature. Typical gate charge of 130 nC ensures fast switching responsiveness.

Maximum gate-source voltage rating of -20 to +20 volts for safe gate operation. Forward voltage drop approximately 1.2 volts minimizes conduction losses. Physical dimensions fit diverse board layouts and thermal designs.

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