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Infineon HEXFET N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-220 IRFZ34NPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin China
Brand Infineon
Height 8.77mm
Length 10.54mm
Model IRFZ34NPBF
Width 4.4mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 29A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 40mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 68W
Typical Gate Charge Qg @ Vgs 34nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.6V
IRFZ34NPBF N-Channel MOSFET, 29 A, 55 V HEXFET, 3-Pin TO-220AB InfineonBrand Infineon

Key Features

  • Features ultra-low on-resistance to minimize power loss during operation.
  • Supports high power dissipation of up to 68 W for reliable performance.
  • Operates within a wide temperature range from -55°C to 175°C.
  • Enhancement mode transistor design improves switching efficiency.
  • 3-pin TO-220 package ensures ease of integration via through-hole mounting.
  • Suitable for power supply, motor control, industrial automation, and automotive applications.
  • Designed to safely handle gate-source voltages up to ±20 V.
  • Dynamic dv/dt rating supports fast switching in advanced electronic circuits.

Product Description

Infineon IRFZ34NPBF HEXFET N-Channel MOSFET is a high-performance electronic component designed for advanced power switching and management applications. It features a 3-pin TO-220 through-hole package, facilitating easy mounting and integration in various electronic assemblies.

This MOSFET supports a maximum continuous drain current of 29 A and can withstand a maximum drain-source voltage of 55 V, making it ideal for robust power handling. The ultra-low on-resistance (40 mΩ) significantly reduces power loss and improves overall circuit efficiency, while the maximum power dissipation rating of 68 W accommodates demanding operational conditions.

With a wide operating temperature range from -55°C to 175°C, this device ensures reliable performance under extreme environmental conditions. Its enhancement mode operation and dynamic dv/dt rating enable fast switching and enhanced device efficiency, essential for modern industrial and automotive electronics.

Applications of the IRFZ34NPBF include power supply designs, motor control for precision speed regulation, discrete switching in consumer electronics, and robust industrial automation systems. The device’s ability to safely handle gate-source voltages up to ±20 V protects against damage during switching processes.

Ultra-low on-resistance reduces power loss and heat generation. High power dissipation capacity ensures durability in rigorous applications. Wide operating temperature range enables use in harsh environments. Enhancement mode operation increases switching efficiency.

3-pin TO-220 package allows through-hole mounting for integration ease. Dynamic dv/dt rating supports rapid switching capability. Suitable for use in power supplies, motor controls, industrial automation, and automotive electronics.

Gate-source voltage tolerance ensures operational safety. Its technical specifications and robust design make it an excellent choice for engineers and technicians in electronic and electrical industries. Explore more products in the Discrete Semiconductors category on EnvMart for comprehensive industrial and laboratory electronic components.

Infineon HEXFET N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-220 IRFZ34NPBF
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Frequently Asked Questions

The maximum continuous drain current is 29 A.

The maximum drain-source voltage is 55 V.

It has a maximum power dissipation rating of 68 W.

The on-resistance is 40 mΩ, which helps minimize power loss during operation.

The operating temperature range is from -55°C to 175°C.

This model uses a 3-pin TO-220 package for through-hole mounting.

The typical gate charge is 34 nC at Vgs.

It can safely handle gate-source voltages up to ±20 V.

It is suitable for power supply designs, motor control, industrial automation, and automotive applications.

The height is 8.77 mm and the width is 4.4 mm.

This model has an N-channel type with enhancement mode operation.

The forward voltage is 1.6 V.

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