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| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRFZ34NPBF |
| Width | 4.4mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
| IRFZ34NPBF N-Channel MOSFET, 29 A, 55 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Infineon IRFZ34NPBF HEXFET N-Channel MOSFET is a high-performance electronic component designed for advanced power switching and management applications. It features a 3-pin TO-220 through-hole package, facilitating easy mounting and integration in various electronic assemblies.
This MOSFET supports a maximum continuous drain current of 29 A and can withstand a maximum drain-source voltage of 55 V, making it ideal for robust power handling. The ultra-low on-resistance (40 mΩ) significantly reduces power loss and improves overall circuit efficiency, while the maximum power dissipation rating of 68 W accommodates demanding operational conditions.
With a wide operating temperature range from -55°C to 175°C, this device ensures reliable performance under extreme environmental conditions. Its enhancement mode operation and dynamic dv/dt rating enable fast switching and enhanced device efficiency, essential for modern industrial and automotive electronics.
Applications of the IRFZ34NPBF include power supply designs, motor control for precision speed regulation, discrete switching in consumer electronics, and robust industrial automation systems. The device’s ability to safely handle gate-source voltages up to ±20 V protects against damage during switching processes.
Ultra-low on-resistance reduces power loss and heat generation. High power dissipation capacity ensures durability in rigorous applications. Wide operating temperature range enables use in harsh environments. Enhancement mode operation increases switching efficiency.
3-pin TO-220 package allows through-hole mounting for integration ease. Dynamic dv/dt rating supports rapid switching capability. Suitable for use in power supplies, motor controls, industrial automation, and automotive electronics.
Gate-source voltage tolerance ensures operational safety. Its technical specifications and robust design make it an excellent choice for engineers and technicians in electronic and electrical industries. Explore more products in the Discrete Semiconductors category on EnvMart for comprehensive industrial and laboratory electronic components.
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