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onsemi PowerTrench Type P-Channel MOSFET 3.5A 20V Enhancement 8-Pin SOIC FDS9431A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS9431A |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features a low on-resistance of 130mΩ for efficient switching.
- High-density DMOS technology ensures rugged and reliable performance.
- Operates over wide temperature range from -55°C to 150°C.
- Designed for voltage-controlled enhancement mode switching.
- Ideal for load switching, DC/DC converters, and power management.
- Compact SOIC package supports surface mounting.
- Maximum power dissipation rating of 2.5W for robust operation.
- Gate charge typical value of 6nC enables fast switching speeds.
Product Description
onsemi FDS9431A is a PowerTrench Type P-Channel MOSFET designed with proprietary high cell density DMOS technology that minimizes on-state resistance and provides rugged, reliable performance for fast switching applications.
It supports a maximum continuous drain current of 3.5A and a maximum drain-source voltage of 20V, housed in an 8-Pin SOIC surface-mount package with compact dimensions (Length 5mm, Width 4mm, Height 1.5mm).
The device is built for voltage-controlled enhancement mode operation with a typical gate charge of 6nC at Vgs, enabling efficient power management and fast switching in electronic circuits.
Operating temperature ranges from -55°C to 150°C, making it suitable for demanding industrial and automotive applications where reliability is critical. Applications include load switching, DC/DC converters, battery protection, power management control, and DC motor control in industrial, laboratory, and automotive electronics.
Low on-resistance of 130mΩ enhances efficiency. Voltage-controlled P-Channel switching ensures precise control. Strong resistance to forward voltage drop of -1.2V improves performance. Surface mount SOIC package supports high-density PCB layouts.
Maximum power dissipation of 2.5W accommodates continuous operation under load. This device does not carry automotive or other formal certifications but is designed to meet stringent performance standards for power MOSFETs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.5A.
It supports a maximum drain-source voltage of 20V.
The typical gate charge at Vgs is 6nC, enabling efficient power management and fast switching.
This model has dimensions of 5mm in length, 4mm in width, and 1.5mm in height.
It features a low on-resistance of 130mΩ, which enhances switching efficiency.
The maximum power dissipation rating is 2.5W, allowing for robust operation under load.
It operates over a wide temperature range from -55°C to 150°C, suitable for demanding applications.
It is housed in an 8-Pin SOIC surface-mount package, supporting high-density PCB layouts.
This model is suitable for load switching, DC/DC converters, battery protection, and power management control.
The forward voltage drop is -1.2V, which improves performance in applications.
It has a Type P channel designed for voltage-controlled enhancement mode switching.
The maximum gate-source voltage is -8V to +8V.
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