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onsemi PowerTrench Type P-Channel MOSFET 3.5 A 20 V Enhancement Mode 8-Pin SOIC FDS9431A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS9431A |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET features a voltage-controlled P-Channel small signal switch.
- It is designed with a high-density cell structure to minimize on-state resistance.
- The device offers superior switching performance and rugged reliability.
- It supports a maximum continuous drain current of 3.5 A and maximum drain source voltage of 20 V.
- The MOSFET is suitable for load switching, DC/DC converters, battery protection, and power management control.
- It includes a maximum power dissipation rating of 2.5 W for reliable operation.
- The device operates within temperatures from -55°C up to 150°C.
- Typical gate charge is 6 nC at Vgs, with gate source voltage limits of -8 V to +8 V.
Product Description
onsemi FDS9431A PowerTrench Type P-Channel MOSFET is an enhancement mode transistor designed using ON Semiconductor’s proprietary high cell density DMOS technology. It provides a rugged, reliable performance with low on-state resistance for efficient fast switching applications.
The transistor has a maximum continuous drain current of 3.5 A and can withstand a drain source voltage up to 20 V. It is supplied in an 8-Pin SOIC surface mount package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height, making it suitable for high-density circuit design.
This MOSFET is voltage-controlled and designed as a P-Channel small signal switch. Its features include a high-density cell design that ensures minimal conduction losses and superior switching characteristics.
Key electrical characteristics include a maximum power dissipation of 2.5 W, a typical gate charge of 6 nC at gate-source voltage, and a gate source voltage limit of -8 V to +8 V. The device operates reliably over a wide temperature range from -55°C to 150°C, allowing use in stringent environmental conditions.
Applications for the onsemi FDS9431A include load switching, DC/DC converters, battery protection, power management control, and DC motor control in various industrial, commercial, and automotive electronic systems.
Voltage-controlled P-Channel small signal switch. High-density cell design minimizes on-state resistance. Offers rugged and reliable performance with superior switching speed. Maximum continuous drain current of 3.5 A. Maximum drain source voltage of 20 V suitable for low voltage power circuits.
Compact 8-Pin SOIC surface mount package for space-saving designs. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 6 nC for efficient gate drive control. Applications include load switching, DC/DC converters, and power management.
Explore more semiconductor MOSFETs and discrete semiconductors in the Electronics & Electricals category at EnvMart for reliable industrial and electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.5 A.
It can withstand a maximum drain-source voltage of 20 V.
The typical gate charge at gate-source voltage is 6 nC.
This model has dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height.
It operates reliably over a wide temperature range from -55°C to 150°C.
The device is supplied in an 8-Pin SOIC surface mount package.
The maximum power dissipation rating is 2.5 W.
It features a P-Channel type channel design.
This MOSFET is suitable for load switching, DC/DC converters, battery protection, and power management control.
The maximum gate-source voltage limits are -8 V to +8 V.
The forward voltage is -1.2 V.
It is designed using onsemi’s proprietary high cell density DMOS technology.
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