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onsemi PowerTrench Type P-Channel MOSFET, 11 A, 20 V, Enhancement Mode, 8-Pin SOIC Package FDS6576
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS6576 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 0.014Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
Key Features
- Equipped with an 8-pin SOIC package for surface mounting applications.
- Features PowerTrench series technology optimized for system efficiency and power density.
- Low typical gate charge of 43nC enabling fast switching.
- Maximum power dissipation of 2.5 W ensures reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C.
- Low drain-source resistance of 0.014Ω reduces conduction losses.
- Supports enhancement mode operation with a maximum gate-source voltage of -12 to +12 V.
- Compliant with RoHS standards ensuring environmental safety.
Product Description
onsemi FDS6576 PowerTrench Type P-Channel MOSFET is engineered for high-performance switching in various industrial and consumer electronic applications. This device supports a maximum continuous drain current of 11 A and a maximum drain-source voltage of 20 V, making it suitable for medium-power circuits.
The 8-pin SOIC surface mount package ensures space-efficient PCB layout while providing reliable mechanical and electrical connections. PowerTrench technology delivers enhanced efficiency and power density through a shielded-gate structure that lowers the figure of merit compared to earlier MOSFET designs.
The MOSFET features a low 43nC typical gate charge and a soft reverse recovery body diode that contributes to fast switching and minimizes electromagnetic interference. Additionally, the device supports an operating temperature range from -55°C to 150°C, suitable for harsh industrial environments.
The maximum power dissipation of 2.5 W combined with a minimal drain-source resistance of 0.014Ω supports effective power management and thermal control. The maximum gate-source voltage rating of -12 to +12 V protects the gate from voltage spikes ensuring robust operation.
Equipped with an 8-pin SOIC package for surface mounting applications. Low typical gate charge enhances switching speed and efficiency. Wide operating temperature range from -55°C to 150°C for industrial reliability. PowerTrench technology provides superior power density and system efficiency.
RoHS compliant ensuring environmentally safe manufacturing. Compact dimensions (Height 1.5mm, Length 5mm, Width 4mm) allow flexible PCB design. Low drain-source resistance minimizes power losses during operation. Forward voltage of 1.2 V supports efficient conduction.
Soft body diode reduces the need for snubber circuits.
This MOSFET fits diverse industrial, electronics manufacturing, and power supply applications including synchronous rectification in AC/DC power supplies, and other switching circuits requiring efficient, reliable P-channel MOSFET devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
This MOSFET has a maximum drain-source voltage rating of 20 V.
The typical gate charge for the FDS6576 is 43 nC, which enhances its switching speed.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The dimensions of this model are 1.5 mm in height, 5 mm in length, and 4 mm in width.
The maximum power dissipation for the FDS6576 is 2.5 W.
The drain-source resistance is 0.014Ω, which helps reduce conduction losses.
This model comes in an 8-pin SOIC package suitable for surface mounting applications.
Yes, the FDS6576 is compliant with RoHS standards, ensuring environmental safety.
The maximum gate-source voltage rating for this device is -12 to +12 V.
This MOSFET is suitable for medium-power circuits, synchronous rectification in AC/DC power supplies, and other switching circuits requiring efficient P-channel devices.
It utilizes PowerTrench technology, which enhances efficiency and power density through a shielded-gate structure.
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