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STMicroelectronics P-Channel STripFET Power MOSFET 10 A, 60 V Enhancement, 3-Pin TO-252 STD10P6F6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.38mm |
| Length | 6.6mm |
| Model | STD10P6F6 |
| Width | 7.45mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 6.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- The MOSFET utilizes ultra-low gate charge design for efficient switching.
- Maximum drain-source resistance of 160 milliohms ensures low conduction losses.
- Supports a gate-source voltage range of -20 to +20 volts for versatility.
- Maximum power dissipation capacity of 30 watts enables reliable operation.
- Package dimensions approximately 7.45 mm wide, 6.6 mm long, and 2.38 mm high.
- Operates reliably from -55°C to a maximum operating temperature of 175°C.
- Designed for surface mount applications in power electronics.
- Forward voltage drop of -1.1 volts complements power efficiency.
Product Description
STMicroelectronics STD10P6F6 P-Channel STripFET Power MOSFET is optimized for industrial electronic applications requiring efficient power switching and robust performance. It supports a maximum continuous drain current of 10 A with a drain-source voltage rating of 60 V, making it suitable for a variety of power management scenarios.
The enhancement mode channel combined with ultra-low gate charge offers improved switching efficiency. This MOSFET is packaged in a compact 3-pin TO-252 surface mount case with precise dimensions of 7.45 mm width, 6.6 mm length, and 2.38 mm height.
With a maximum power dissipation of 30 W and rated operation from -55°C to 175°C, this device is reliable for demanding industrial, automotive (non-automotive standard compliant), and commercial power electronics and control systems.
The maximum drain-source resistance of 160 milliohms minimizes power loss under load, while the gate-source voltage range of -20 V to +20 V provides flexibility in circuit design. Forward voltage drop of -1.1 V and typical gate charge of 6.4 nC at Vgs enable rapid switching and efficient operation.
This MOSFET is ideal for applications like DC power management, power supply regulation, motor controls, and other semiconductor discrete component tasks within electronic assemblies.
The MOSFET utilizes ultra-low gate charge design for efficient switching. Maximum drain-source resistance of 160 milliohms ensures low conduction losses. Supports a gate-source voltage range of -20 to +20 volts for versatility.
Maximum power dissipation capacity of 30 watts enables reliable operation. Package dimensions approximately 7.45 mm wide, 6.6 mm long, and 2.38 mm high. Operates reliably from -55°C to a maximum operating temperature of 175°C.
Designed for surface mount applications in power electronics. Forward voltage drop of -1.1 volts complements power efficiency. Typical gate charge at Vgs (6.4 nC) facilitates fast switching. Explore a wide selection of precise semiconductor components including Power MOSFETs at EnvMart for your industrial and commercial electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for the STD10P6F6 is 10 A.
This model has a maximum drain-source voltage rating of 60 V.
The package dimensions are approximately 7.45 mm wide, 6.6 mm long, and 2.38 mm high.
The maximum power dissipation capacity of this MOSFET is 30 W.
It operates reliably from -55°C to a maximum operating temperature of 175°C.
The maximum drain-source resistance is 160 milliohms.
It supports a gate-source voltage range of -20 V to +20 V.
This model features a P-channel enhancement mode channel.
The typical gate charge at Vgs is 6.4 nC.
It is designed for applications in power management, such as DC power management, power supply regulation, and motor controls.
The forward voltage drop is -1.1 V.
This model is designed for surface mount applications.
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