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Infineon HEXFET N-Channel MOSFET 30A 55V Enhancement Mode 3-Pin TO-263 IRLZ34NSTRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRLZ34NSTRLPBF |
| Width | 11.3mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| N-Channel MOSFET, 30 A, 55 V, 3-Pin D2PAK Infineon IRLZ34NSPBFBrand | Infineon |
Key Features
- Low gate threshold voltage enhances switching speed.
- Low RDS(on) ensures efficient power dissipation.
- High thermal resistance supports operation up to 175°C.
- Surface mount TO-263 package allows easy PCB integration.
- Maximum power dissipation of 68W for durability.
- Supports enhancement mode transistor configurations for switching.
- Ideal for power supplies, motor control, and DC-DC converters.
- Robust design suitable for automotive and industrial applications.
Product Description
Infineon IRLZ34NSTRLPBF is a high-performance HEXFET N-Channel MOSFET designed for efficient switching and power management in electrical circuits. Rated for a maximum continuous drain current of 30A and a maximum drain-source voltage of 55V, this device excels in automotive, industrial, and consumer electronics applications.
The MOSFET features a low gate threshold voltage that ensures rapid switching and low drain-source resistance (RDS(on)) for minimal power loss. With a maximum power dissipation of 68W and a thermal rating allowing operation up to 175°C, it maintains reliable performance under demanding thermal conditions.
The surface mount TO-263 (D2PAK) package type facilitates compact circuit board designs and ease of installation. The device's enhancement mode channel supports versatile switching applications, including power supply voltage regulation, motor control, DC-DC converters, and precision instrumentation.
This MOSFET is well-suited for automotive systems requiring high reliability and thermal endurance. Its robust construction makes it compatible with industrial use cases and consumer electronics needing efficient amplification and switching.
Low gate threshold voltage enhances switching speed. Low RDS(on) ensures efficient power dissipation. High thermal resistance supports operation up to 175°C. Surface mount TO-263 package allows easy PCB integration. Maximum power dissipation of 68W for durability.
Supports enhancement mode transistor configurations for switching. Ideal for power supplies, motor control, and DC-DC converters. Robust design suitable for automotive and industrial applications.
This Infineon MOSFET IRLZ34NSTRLPBF is a critical component in electronics requiring reliable switching performance with thermal and electrical robustness. Browse our extensive Semiconductor category at EnvMart for compatible electronic components and accessories.
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Frequently Asked Questions
This model has a maximum continuous drain current of 30A.
The maximum drain-source voltage for this MOSFET is 55V.
It supports a maximum power dissipation of 68W.
The device comes in a surface mount TO-263 package type.
The dimensions are 10.67mm in length, 11.3mm in width, and 4.83mm in height.
It operates within a temperature range of -55°C to 175°C.
This model features an N-channel configuration.
The maximum drain-source resistance (RDS(on)) is 60mΩ.
The typical gate charge (Qg) at Vgs is 25nC.
It can handle a maximum gate-source voltage of -16V to +16V.
It is ideal for power supplies, motor control, and DC-DC converters.
The forward voltage (Vf) is 1.3V.
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