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onsemi Small Signal PNP Transistor, 200 mA Collector Current, 40 V Collector-Emitter Voltage, 3-Pin SOT-23 SMMBT3906LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model SMMBT3906LT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V dc
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO 40V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Small signal transistor in SOT-23 surface mount package.
  • Maximum DC collector current of 200 mA suitable for low power switching.
  • Collector-emitter voltage rating of 40 V DC ensuring robust voltage tolerance.
  • High transition frequency up to 100 MHz for fast switching applications.
  • Operating temperature range from -65°C to 150°C for varied environmental conditions.
  • Power dissipation of 225 mW suitable for compact circuit designs.
  • Three-pin configuration simplifies integration in PCB layouts.
  • Minimum DC current gain (hFE) of 30 guarantees amplification performance.

Product Description

The onsemi SMMBT3906LT1G is a small signal PNP bipolar junction transistor housed in a compact SOT-23 surface mount package, offering excellent performance for discrete semiconductor applications.

Designed to handle a maximum DC collector current of 200 mA and a collector-emitter voltage of 40 V DC, it is ideal for use in low power amplification and switching circuits across a broad range of electronic designs.

This transistor provides a minimum DC current gain (hFE) of 30 and a high transition frequency of 100 MHz, enabling it to operate efficiently in high-frequency circuits such as audio and RF amplifiers.

The device supports a wide operating temperature range from -65°C to +150°C, making it suitable for automotive and industrial environments where temperature variations are critical considerations.

The maximum power dissipation of 225 mW ensures stable operation within compact boards, while the three-pin SOT-23 package facilitates easy mounting on surface mount PCBs, optimizing automated assembly processes.

Small signal transistor in SOT-23 surface mount package. Maximum DC collector current of 200 mA for low power applications. Collector-emitter voltage rating of 40 V DC tolerance. High transition frequency of 100 MHz for fast switching circuits.

Wide operating temperature range from -65°C to 150°C. Power dissipation of 225 mW for compact PCB integration. Three-pin configuration for standard PCB footprint. Minimum DC current gain (hFE) of 30 for amplification efficiency.

It finds applications in electronic circuits requiring reliable switching and amplification, suitable for industrial controls, automotive electronics, communications, and consumer electronics.

Explore more semiconductors and transistor options in the Bipolar Transistors category at EnvMart for your industrial and laboratory needs.

onsemi Small Signal PNP Transistor, 200 mA Collector Current, 40 V Collector-Emitter Voltage, 3-Pin SOT-23 SMMBT3906LT1G
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Frequently Asked Questions

The maximum DC collector current for the SMMBT3906LT1G is 200 mA, making it suitable for low power applications.

This model has a collector-emitter voltage rating of 40 V DC, ensuring robust voltage tolerance in circuits.

It features a high transition frequency of up to 100 MHz, which is beneficial for fast switching applications.

The operating temperature range for the SMMBT3906LT1G is from -65°C to 150°C, suitable for various environmental conditions.

The maximum power dissipation for this transistor is 225 mW, allowing for stable operation in compact circuit designs.

This transistor has a three-pin configuration, facilitating easy integration into PCB layouts.

The dimensions of this model are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The SMMBT3906LT1G is housed in a SOT-23 surface mount package, which is standard for many compact electronic applications.

The minimum DC current gain (hFE) for the SMMBT3906LT1G is 30, ensuring effective amplification performance.

The maximum emitter-base voltage (VEBO) for this transistor is -5 V, which is critical for its operation in circuits.

This transistor is suitable for applications in low power amplification and switching circuits, including automotive and industrial electronics.

The configuration of this transistor is single, which is typical for discrete semiconductor applications.

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