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Infineon HEXFET N-Channel MOSFET 33 A 100 V Enhancement Mode 3-Pin TO-220 IRF540NPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF540NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 44mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 130W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| Infineon HEXFET N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB IRF540NPBFBrand | Infineon |
Key Features
- Supports efficient switching with low on-resistance for better thermal management.
- Operates in enhancement mode for precise control and reliable switching.
- Designed in a TO-220AB package for effective heat dissipation and easy through-hole mounting.
- Capable of maximum power dissipation of 130 W suitable for high power applications.
- Maintains operation over a wide temperature range from -55°C to +175°C.
- Typical gate charge of 71nC enables fast switching speeds for improved performance.
- Rated for a maximum gate source voltage of ±20 V and a forward voltage drop of 1.2 V.
- Ideal for use in power supplies, motor drivers, automation controls, inverters, and renewable energy converters.
Product Description
Infineon IRF540NPBF HEXFET N-Channel MOSFET is engineered for efficient power management and high current switching applications, delivering a continuous drain current of 33 A and a drain-source voltage up to 100 V. Housed in a durable TO-220AB package with three pins for through-hole mounting, it ensures excellent heat dissipation and reliable mechanical integration.
This MOSFET operates in enhancement mode, allowing it to stay off with zero gate voltage and switch on when the gate voltage exceeds the threshold, providing precise control over power delivery. Its low on-resistance (44 mΩ) contributes to reduced power loss and enhanced thermal performance, making it suitable for demanding industrial and commercial applications.
The device supports a maximum power dissipation of 130 W and is capable of functioning in extreme temperature environments ranging from -55°C to 175°C, ensuring robust reliability in harsh conditions. With a typical gate charge of 71 nC at Vgs, it facilitates fast switching speeds to improve efficiency in motor control circuits, power supply units, automation systems, inverters, and renewable energy devices.
Supports efficient switching with low on-resistance for better thermal management. Operates in enhancement mode for precise control and reliable switching. Designed in a TO-220AB package for effective heat dissipation and easy through-hole mounting.
Capable of maximum power dissipation of 130 W suitable for high power applications. Maintains operation over a wide temperature range from -55°C to +175°C. Typical gate charge of 71nC enables fast switching speeds for improved performance.
Rated for a maximum gate source voltage of ±20 V and a forward voltage drop of 1.2 V. Ideal for use in power supplies, motor drivers, automation controls, inverters, and renewable energy converters.
This MOSFET is highly suited for use in industrial power switching circuits, laboratory and test equipment, HVAC motor controls, manufacturing automation, and commercial electrical power management systems. Its reliable performance and robust package design provide confidence for extensive application use.
Explore more power semiconductors and related components in EnvMart's comprehensive Electronics & Electricals catalog designed for industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 33 A.
It can handle a maximum drain-source voltage of 100 V.
The maximum power dissipation capacity is 130 W.
This MOSFET is housed in a TO-220AB package.
The typical gate charge is 71 nC at Vgs.
It operates over a wide temperature range from -55°C to 175°C.
The forward voltage drop is rated at 1.2 V.
This model has 3 pins for connection.
The channel type of this MOSFET is N-channel.
The maximum gate-source voltage is rated at ±20 V.
The maximum drain-source resistance (Rds) is 44 mΩ.
It is designed for through-hole mounting.
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