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Infineon STripFET N-Channel MOSFET 120A, 75V Enhancement, 3-Pin TO-263 STB160N75F3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.6mm |
| Length | 10.75mm |
| Model | STB160N75F3 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 3.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports a maximum drain current of 120 Amps for heavy-duty applications.
- Operates with a maximum drain-source voltage of 75 Volts enhancing versatility.
- Features low on-resistance of 3.7 milliohms for efficient power delivery.
- Utilizes enhancement mode channel for effective switching capabilities.
- Designed with a compact 3-pin TO-263 surface mount package.
- Maximum power dissipation rating of 330 Watts for thermal reliability.
- Stable operation in temperature ranges from -55°C to 175°C.
- Typical gate charge of 85 nanocoulombs at standard gate voltage ensures responsiveness.
Product Description
STMicroelectronics STB160N75F3 is a reliable STripFET N-Channel MOSFET designed for industrial and electronic power management applications requiring high current and voltage capacity.
This transistor delivers a continuous drain current of 120 Amps and supports a maximum drain-source voltage of 75 Volts, making it suitable for switching and amplification roles in power electronics.
The device features a low on-state resistance of 3.7 mΩ, which ensures minimal power losses and enhanced efficiency in circuits. Its enhancement mode channel provides effective switching with fast response times.
Housed in a surface mount TO-263 case with 3 pins, the compact size aids ease of integration into PCB designs. It supports maximum power dissipation of up to 330 Watts, and operates reliably from temperatures as low as -55°C up to 175°C, making it suitable for harsh industrial environments.
Other electrical characteristics include a typical gate charge of 85 nC at 10 V gate voltage and a maximum gate-source voltage range of -20 V to +20 V, allowing for robust and safe gate control.
Supports 120 A continuous drain current for heavy-duty power switching. 75 V maximum drain-source voltage for versatile electrical load handling. Low Rds(on) of 3.7 mΩ ensures efficient power conversion. Enhancement mode channel type for superior switching performance.
3-pin TO-263 package suitable for surface mount applications. 330 W power dissipation rating enables high-power operation. Wide operating temperature range from -55°C to 175°C suitable for industrial use. Typical gate charge of 85 nC allows fast switching with low losses.
Gate-source voltage tolerance -20 V to +20 V ensures robust gate control. Compact dimensions simplify PCB layout and integration.
This MOSFET is ideal for applications in power management, motor control, industrial automation, and electronic equipment where reliable switching at high currents and voltages is essential.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 Amps, suitable for heavy-duty applications.
It supports a maximum drain-source voltage of 75 Volts, enhancing its versatility in various applications.
This MOSFET features a low on-resistance of 3.7 milliohms, which ensures efficient power delivery.
It utilizes an enhancement mode channel, providing effective switching capabilities.
The dimensions of the TO-263 package are 10.75mm in length, 10.4mm in width, and 4.6mm in height.
The maximum power dissipation rating is 330 Watts, allowing for high-power operation.
It operates reliably within a temperature range from -55°C to 175°C, making it suitable for harsh environments.
The typical gate charge is 85 nanocoulombs at a standard gate voltage of 10 V, ensuring responsiveness.
The maximum gate-source voltage tolerance is -20 V to +20 V, allowing for robust gate control.
This MOSFET has a pin count of 3, designed for surface mount applications.
It is ideal for applications in power management, motor control, industrial automation, and electronic equipment.
This model belongs to the STripFET series, which is designed for high current and voltage capacity applications.
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