Infineon HEXFET N-Channel MOSFET 100 A 75 V Enhancement Surface Mount TO-263 3-Pin IRF1407STRLPBF

Infineon IRF1407STRLPBF HEXFET N-Channel MOSFET is a high current power transistor designed for switching and amplification in electronic circuits requiring robust performance and low conduction losses. This component is housed in a TO-263 surface mount package with 3 pins, facilitating easy assembly on circuit boards in power and industrial electronics.

It supports a maximum continuous drain current of 100 A and a maximum drain-source voltage of 75 V, making it ideal for medium to high power applications such as motor drives, power supplies, and DC-DC converters. The enhancement mode channel type ensures efficient switching with a low on-resistance of 7 milliohms, which helps minimize power dissipation and improve thermal management.

The device operates reliably over a temperature range from −55°C up to 175°C, suitable for demanding industrial environments. Featuring a typical gate charge of 160 nC and a forward voltage of 1.3 V, this MOSFET balances speed and power efficiency well.

Compact physical dimensions - length 10.67 mm, width 4.83 mm, and height 9.65 mm - make it adaptable for a variety of PCB layouts where space conservation is critical.

Though not automotive certified, it serves a wide range of industrial, commercial, and laboratory applications where power MOSFETs are required for switching, amplification, and load driving with high efficiency and reliability.

This MOSFET features a 3-pin TO-263 surface mount package for easy integration into electronic circuits. Maximum continuous drain current is rated at 100 amperes for handling high loads. Maximum drain-source voltage is 75 volts, suitable for a variety of power switching applications.

Channel mode is enhancement type with low drain-source resistance of 7 milliohms that reduces conduction losses. Operates efficiently up to a maximum temperature of 175 degrees Celsius with a minimum operating temperature of −55 degrees Celsius.

Typical gate charge of 160 nanocoulombs allows for fast switching speeds and reduced power dissipation. Robust design includes a forward voltage drop of 1.3 volts ensuring reliable performance. Dimensions are compact: length 10.67 mm, width 4.83 mm, and height 9.65 mm.

Designed without automotive standard certification but suitable for industrial and commercial electronic power control applications.

For professional engineers seeking reliable power MOSFET components for semiconductor applications, the Infineon IRF1407STRLPBF offers proven HEXFET technology with optimal efficiency and robustness. Explore more products in semiconductor and discrete component categories at EnvMart for your industrial, laboratory, and commercial needs.