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Infineon N-Channel IGBT, 100 A, 1200 V, 3-Pin TO-247 Through Hole IGW60T120FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IGW60T120FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 15.8mJ |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 100A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 375W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Capable of maximum continuous collector current of 100 amperes.
- Collector-emitter voltage rating of 1200 volts ensures high voltage operation.
- Maximum power dissipation of 375 watts supports efficient thermal management.
- Through hole mount type with TO-247 package offers easy PCB assembly.
- High switching speed up to 1 MHz suitable for fast switching applications.
- Operating temperature range from -40°C to 150°C for robust performance.
- Maximum gate-emitter voltage of 20 volts ensures safe gate control.
- Low collector-emitter saturation voltage of 2.4 V reduces conduction losses.
Product Description
Infineon IGW60T120FKSA1 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching in power semiconductor applications. Rated at 100 A continuous collector current and a collector-emitter voltage of 1200 V, this device is housed in a durable 3-pin TO-247 package suitable for through hole mounting.
Utilizing Infineon's TrenchStop technology, this IGBT offers very low collector-emitter saturation voltage, minimizing conduction losses while supporting a maximum power dissipation of 375 W. The device is capable of switching speeds up to 1 MHz, making it ideal for applications requiring fast and efficient power control.
Designed to operate across a wide temperature range from -40°C to 150°C, the IGW60T120FKSA1 supports robust operation in harsh industrial environments. Its maximum gate-emitter voltage of 20 V ensures reliable gate control without risk of damage to the transistor.
This product finds applications in industrial motor drives, inverter circuits, switching power supplies, and other high-power electronic equipment where efficient power handling and reliability are critical. The through hole TO-247 package allows for straightforward installation on printed circuit boards.
Maximum continuous collector current: 100 A. Collector-emitter voltage rating: 1200 V. Maximum power dissipation: 375 W. Through hole TO-247 package type. High switching frequency up to 1 MHz. Operating temperature range: -40°C to 150°C.
TrenchStop technology for low losses. Maximum gate-emitter voltage: 20 V. Low collector-emitter saturation voltage: 2.4 V. Suitable for industrial power electronics applications.
This Infineon IGBT is a reliable choice for efficient energy conversion in industrial, manufacturing, and commercial electrical systems. Explore more power semiconductors in the Infineon range at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current of this IGBT is 100 A.
The collector-emitter voltage rating for this model is 1200 V.
It supports a maximum power dissipation of 375 W.
The operating temperature range for this IGBT is from -40°C to 150°C.
This model is capable of switching speeds up to 1 MHz.
The package type for this IGBT is TO-247, which is suitable for through hole mounting.
The maximum gate-emitter voltage for this IGBT is 20 V.
The collector-emitter saturation voltage is 2.4 V.
This IGBT utilizes Infineon's TrenchStop technology, which helps minimize conduction losses.
This IGBT has a pin count of 3.
This model is suitable for applications in industrial motor drives, inverter circuits, and switching power supplies.
The energy rating of this IGBT is 15.8 mJ.
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