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Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC047N08NS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC047N08NS3GATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 8.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET features a low maximum drain-source resistance of 8.9 milliohms for efficient conduction.
- Capable of dissipating up to 125 watts of power, suitable for high power applications.
- Operates reliably from -55°C to 150°C, ensuring durability in harsh environments.
- Typical gate charge is 52 nanocoulombs at Vgs, optimizing switching speed and efficiency.
- The device supports forward voltage of 1.2 volts enhancing overall performance.
- Designed for surface mount technology with a compact 8-pin TDSON package.
- This enhancement mode MOSFET is ideal for fast switching in switched-mode power supplies (SMPS) and DC/DC converters.
- Lead-free plating offers compliance with environmental standards.
Product Description
Infineon BSC047N08NS3GATMA1 OptiMOS 3 N-Channel MOSFET is a high-performance semiconductor device rated at 100 amperes maximum continuous drain current and 80 volts maximum drain-source voltage. It operates in enhancement mode with an optimized gate charge which provides excellent switching characteristics, making it ideal for advanced power management in industrial, electronic, and automotive applications.
The MOSFET comes in a compact 8-pin TDSON surface mount package designed to minimize board space while supporting high power dissipation of 125 watts. Its robust construction allows operation within the temperature range of -55°C to 150°C, making it suitable for harsh and demanding environments.
Featuring a low drain-source resistance of 8.9 milliohms, the device achieves high efficiency and reduced power loss during conduction. The typical gate charge of 52 nanocoulombs facilitates fast switching speeds necessary for switching power supplies and DC/DC converters.
This device includes lead-free plating compliant with environmental regulations. Its small dimensions (6.1 mm length, 5.35 mm width, 1.1 mm height) enable compact design implementations in power electronics systems.
Infineon’s OptiMOS 3 series is engineered to meet the requirements of next-generation voltage regulation standards, offering enhanced energy efficiency, power density, and improved system reliability.
The MOSFET's characteristics make it ideal for industrial power supplies, computing power regulation, and automotive powertrain electronics. Applications include switch-mode power supplies, DC/DC converters, and high-speed switching circuits.
This component supports customers requiring durable and cost-effective power semiconductor solutions with excellent thermal handling. Its surface mount technology facilitates automated manufacturing workflows and volume production efficiency.
Explore EnvMart for a wide range of Infineon power semiconductors and MOSFETs optimized for various industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon OptiMOS 3 N-Channel MOSFET is 100 amperes.
This model has a maximum drain-source voltage rating of 80 volts.
The maximum power dissipation capability of this MOSFET is 125 watts.
The typical gate charge at Vgs for this device is 52 nanocoulombs.
The dimensions of this model are 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.
It operates reliably within a temperature range of -55°C to 150°C.
The maximum drain-source resistance for this MOSFET is 8.9 milliohms.
This model comes in an 8-pin TDSON surface mount package.
This device uses an N-channel configuration and operates in enhancement mode.
It is suitable for applications such as switch-mode power supplies, DC/DC converters, and high-speed switching circuits.
The forward voltage of this MOSFET is 1.2 volts.
The device features lead-free plating, ensuring compliance with environmental standards.
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