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Infineon OptiMOS N-Channel MOSFET, 100 A Continuous Drain Current, 25 V Drain Source Voltage, 8-Pin TDSON BSC010NE2LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC010NE2LSATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 1.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Designed for high efficiency power switching applications.
- Offers ultra low Rds(on) of 1.3 mΩ for minimal conduction losses.
- Supports a maximum power dissipation of 96 W.
- Operates reliably from -55°C up to 150°C ambient temperature.
- Typical gate charge of 31 nC ensures fast switching capabilities.
- Built with an enhancement mode N-channel MOSFET design.
- Package height of 1.1 mm and footprint length of 6.1 mm enable compact PCB layouts.
- Surface mount technology suitable for automated assembly processes.
Product Description
Infineon BSC010NE2LSATMA1 is a high-performance OptiMOS N-Channel MOSFET designed for demanding power switching and voltage regulation applications. It supports a continuous drain current of 100 A and a drain-source voltage rating of 25 V, ideal for compact and efficient electronic systems.
This device comes in an 8-pin TDSON surface mount package with a low profile height of 1.1 mm and a length of 6.1 mm, allowing for dense PCB design and reduced footprint. The MOSFET offers ultra-low on-resistance (Rds(on)) of 1.3 mΩ, minimizing conduction losses and improving overall system efficiency.
Designed with an enhancement mode N-channel structure, this MOSFET has a typical gate charge (Qg) of 31 nC at Vgs, which enables fast switching and precise control. It withstands a maximum gate-source voltage of ±20 V and a maximum operating temperature of 150°C, ensuring reliable performance under harsh thermal conditions.
Its maximum power dissipation is rated at 96 W, making it suitable for a variety of industrial, automotive, and electronic applications requiring high current switching with minimal losses. The device operates reliably down to -55°C, enabling usage in diverse environmental conditions.
Designed for high efficiency power switching applications. Offers ultra low Rds(on) of 1.3 mΩ for minimal conduction losses. Supports a maximum power dissipation of 96 W. Operates reliably from -55°C up to 150°C ambient temperature.
Typical gate charge of 31 nC ensures fast switching capabilities. Built with an enhancement mode N-channel MOSFET design. Package height of 1.1 mm and footprint length of 6.1 mm enable compact PCB layouts. Surface mount technology suitable for automated assembly processes.
Maximum gate-source voltage tolerance of ±20 V for robust operation. Forward voltage rated at 1 V enhancing energy efficiency.
This MOSFET is ideal for use in industrial electronics, automotive power management systems, consumer electronics, and computing power regulation circuits. Its compact form factor simplifies integration into advanced PCB designs. Explore the extensive category of Power MOSFETs and Discrete Semiconductors on EnvMart for complementary components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It has a maximum drain-source voltage rating of 25 V.
The on-resistance (Rds(on)) is 1.3 mΩ, which helps minimize conduction losses.
The typical gate charge (Qg) at Vgs is 31 nC, enabling fast switching capabilities.
The package height is 1.1 mm, length is 6.1 mm, and width is 5.35 mm.
It supports a maximum power dissipation of 96 W.
This unit operates reliably from -55°C to 150°C ambient temperature.
It supports surface mount technology, making it suitable for automated assembly processes.
The maximum gate-source voltage tolerance is ±20 V.
This MOSFET is suitable for industrial electronics, automotive power management systems, and consumer electronics.
It features an enhancement mode N-channel design.
The country of origin for this model is India.
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