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Infineon OptiMOS 3 N-Channel MOSFET 25 A 250 V Enhancement Mode 8-Pin TDSON BSC600N25NS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC600N25NS3GATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The 25A continuous current supports medium power applications.
- 250V drain-source voltage suits high voltage switching.
- 60mΩ typical drain-source resistance reduces conduction loss.
- Enhanced switching with 22nC typical gate charge at 22 V gate drive.
- Maximum power dissipation of 125W supports high thermal loads.
- Operating temperature range spans -55°C to 150°C for harsh environments.
- Compact 8-pin TDSON surface-mount package enables small PCB footprint.
- Designed for synchronous rectification and DC-DC converter applications.
Product Description
Infineon BSC600N25NS3GATMA1 OptiMOS 3 N-Channel MOSFET is designed for power switching applications requiring a high continuous drain current of 25A and a maximum drain-source voltage of 250V. Packaged in an 8-pin TDSON surface-mount format, this device ensures compact board integration while delivering efficient power management.
The device utilizes the enhancement mode channel for effective low-side switching or synchronous topologies, improving overall circuit efficiency. Its low Rds(on) of 60mΩ reduces conduction losses, and a typical gate charge of 22nC ensures responsive switching performance, making it suitable for fast switching power supplies.
Operating over a temperature range from -55°C to 150°C, the MOSFET is rugged enough for industrial, automotive, and industrial switching applications exposed to extreme thermal conditions. With a maximum power dissipation rating of 125W, it can handle substantial thermal loads with proper PCB thermal design.
Common applications include high-voltage DC-DC converters, synchronous rectifiers in power supplies, motor drive stages requiring robust current handling, and compact switch-mode power supplies with stringent space requirements. The TDSON package facilitates surface mounting with excellent mechanical stability.
Supports high-voltage switching up to 250V drain-source voltage. Delivers continuous drain current up to 25A for moderate power loads. Features low Rds(on) of 60mΩ to minimize conduction losses. Offers typical gate charge of 22nC for efficient switching.
Maximum power dissipation rating of 125W allows for elevated thermal conditions. Wide operating temperature range of -55°C to 150°C for harsh environments. Compact 8-pin TDSON surface-mount package enhances PCB integration.
Ideal for synchronous rectification and DC-DC power conversion. Suitable for motor drive and industrial switching circuits. Explore more Infineon MOSFETs and semiconductor devices to optimize your electronic designs with reliable and efficient components at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 25A.
This MOSFET has a maximum drain-source voltage rating of 250V.
The typical drain-source resistance (Rds(on)) is 60mΩ, which helps minimize conduction losses.
The typical gate charge at a 22V gate drive is 22nC, ensuring efficient switching performance.
The maximum power dissipation rating for this unit is 125W, suitable for handling substantial thermal loads.
It operates over a temperature range from -55°C to 150°C, making it suitable for harsh environments.
This model is packaged in an 8-pin TDSON surface-mount format, which facilitates compact PCB integration.
It is designed for synchronous rectification, DC-DC converters, and motor drive stages requiring robust current handling.
The dimensions of this model are 6.1mm in length, 5.35mm in width, and 1.1mm in height.
This model features an N-channel type, designed for effective low-side switching or synchronous topologies.
The maximum gate-source voltage for this device is -20V to +20V.
The country of origin for this model is India.
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