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onsemi PowerTrench Type P-Channel MOSFET, 8.8 A, 30 V Enhancement Mode, 8-Pin SOIC SI4435DY
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.57mm |
| Length | 4.9mm |
| Model | SI4435DY |
| Width | 3.9mm |
| Mount Type | Solder |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 35mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Type P channel enhancement mode for efficient power switching.
- Maximum continuous drain current of 8.8 A ensures robust operation.
- Maximum drain-source voltage rating of 30 V suitable for medium voltage applications.
- Low typical gate charge (17 nC) supports fast switching speeds.
- Maximum power dissipation rating of 2.5 W supports reliable thermal performance.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- Forward voltage drop of 1.2 V enabling efficient conduction.
- Mount type solder designed for standard PCB assembly.
Product Description
onsemi SI4435DY PowerTrench Type P-Channel MOSFET is a high-efficiency semiconductor device designed for use in power switching applications within industrial, automotive, and consumer electronics.
This MOSFET features a P-channel enhancement mode configuration optimized with onsemi's PowerTrench technology, delivering low gate charge, low Rds(on), and a shielded-gate structure that enhances switching performance and system efficiency.
Rated for a maximum continuous drain current of 8.8 A and drain-source voltage up to 30 V, the device supports a range of medium-voltage applications including synchronous rectification, power management, and load switching.
Packaged in an 8-pin SOIC outline, it facilitates easy PCB mounting and integration into compact designs, offering a low-profile footprint with dimensions of 4.9 mm length, 3.9 mm width, and 1.57 mm height. The solder mount type ensures secure connection and thermal dissipation.
The MOSFET tolerates a wide operating temperature range from -55°C to 175°C, making it suitable for demanding environments such as automotive systems and industrial controls. Its maximum power dissipation of 2.5 W and typical gate charge of 17 nC contribute to efficient switching and reduced heat generation.
Additional features include a maximum gate-source voltage of ±20 V and a forward voltage of 1.2 V, contributing to reliable device protection and conduction characteristics. Type P channel enhancement mode for efficient power switching.
Maximum continuous drain current of 8.8 A for robust electrical performance. Maximum drain-source voltage of 30 V suitable for medium voltage circuits. Low gate charge (17 nC) enabling fast switching and reduced losses. Compact, easy-to-mount SOIC 8-pin package design.
High maximum power dissipation of 2.5 W for thermal stability. Wide operating temperature range from -55°C to 175°C for versatile use. Low drain-source resistance of 35 mΩ minimizes conduction losses. Forward voltage of 1.2 V to optimize efficiency.
Solder mount type for standard PCB assembly applications.
This onsemi PowerTrench MOSFET is widely applied in industrial electronics, automotive power systems, power supplies, and electronic equipment requiring efficient power switching and control.
Explore more semiconductor solutions within the MOSFET category at EnvMart for industrial, laboratory, and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.8 A.
It has a maximum drain-source voltage rating of 30 V, making it suitable for medium voltage applications.
The typical gate charge is 17 nC, which supports fast switching speeds.
The maximum power dissipation rating is 2.5 W, which supports reliable thermal performance.
This MOSFET operates within a wide temperature range from -55°C to 175°C.
The dimensions are 4.9 mm in length, 3.9 mm in width, and 1.57 mm in height.
It is packaged in an 8-pin SOIC outline, designed for easy PCB mounting.
The forward voltage drop is 1.2 V, which enables efficient conduction.
The maximum gate-source voltage is ±20 V, providing reliable device protection.
It features a P-channel enhancement mode configuration optimized for efficient power switching.
The maximum drain-source resistance is 35 mΩ, which minimizes conduction losses.
This model is suitable for applications in industrial electronics, automotive power systems, and power management.
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