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Infineon CoolMOS CFD N-Channel MOSFET, 43 A, 700 V Enhancement, 3-Pin TO-247 IPW65R080CFDAFKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IPW65R080CFDAFKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS CFD |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 43A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 391W |
| Typical Gate Charge Qg @ Vgs | 167nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 0.9V |
Key Features
- High performance CoolMOS CFD technology ensures enhanced efficiency.
- Chip optimized for automotive and industrial applications.
- Through hole mount with 3-pin configuration for ease of integration.
- Maximum power dissipation of 391 Watts supports demanding environments.
- Wide operating temperature from -55°C to 150°C ensures robust reliability.
- Low on-resistance of 80 milliohms minimizes conduction losses.
- Typical gate charge of 167 nanocoulombs improves switching efficiency.
- Automotive standard AEC-Q101 compliant for high quality and safety.
Product Description
Infineon IPW65R080CFDAFKSA1 CoolMOS CFD N-Channel MOSFET is designed for high efficiency power switching applications requiring reliable operation at elevated currents and voltages. This device supports a continuous drain current of 43 A and is rated for up to 700 V drain-source voltage, making it suitable for demanding industrial, automotive, and power management use cases.
Featuring the CoolMOS CFD series technology, it offers reduced conduction and switching losses, enabling improved power density and system efficiency. The enhancement mode channel provides controlled and precise switching behavior.
Packaged in a 3-pin TO-247 through-hole format, this MOSFET is easy to install and replace in power assemblies and motor drives. Its maximum power dissipation of 391 W allows it to handle high power loads reliably, even under challenging thermal conditions.
The device operates reliably across a wide temperature range from -55°C to 150°C, suitable for automotive and industrial environments. With a low maximum drain-source resistance of 80 milliohms, it minimizes energy loss during conduction phases.
The typical gate charge of 167 nanocoulombs helps reduce switching losses, contributing to overall system efficiency improvements. The MOSFET also withstands gate-source voltages up to ±30 V, adding robustness in varying electrical conditions.
High performance CoolMOS CFD technology ensures enhanced efficiency. Chip optimized for automotive and industrial applications. Through hole mount with 3-pin configuration for ease of integration. Maximum power dissipation of 391 Watts supports demanding environments.
Wide operating temperature from -55°C to 150°C ensures robust reliability. Low on-resistance of 80 milliohms minimizes conduction losses. Typical gate charge of 167 nanocoulombs improves switching efficiency. Automotive standard AEC-Q101 compliant for high quality and safety.
This MOSFET is ideal for industrial power supplies, automotive motor control, renewable energy inverters, and high-efficiency power management circuits. Infineon's CoolMOS CFD delivers a reliable and efficient solution to meet next-generation power conversion and electronic control demands.
Explore further Infineon semiconductor solutions and components available on EnvMart to enhance your electronic designs and applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 43 A.
This unit is rated for a maximum drain-source voltage of 700 V.
It has a maximum power dissipation of 391 Watts, allowing it to handle high power loads reliably.
The operating temperature range is from -55°C to 150°C, making it suitable for various environments.
This MOSFET comes in a TO-247 package type with a 3-pin configuration for ease of integration.
The typical gate charge is 167 nanocoulombs, which helps improve switching efficiency.
The maximum drain-source resistance is 80 milliohms, which minimizes conduction losses.
This model is compliant with the automotive standard AEC-Q101, ensuring high quality and safety.
The dimensions are 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width.
It utilizes an enhancement mode N-channel configuration for controlled switching behavior.
It is optimized for automotive and industrial applications, including power management and motor control.
The maximum gate-source voltage is ±30 V, providing robustness in varying electrical conditions.
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