Infineon StrongIRFET N-Channel MOSFET 195 A 60 V Enhancement Surface Mount TO-263 IRFS7534TRLPBF

Infineon IRFS7534TRLPBF StrongIRFET N-Channel MOSFET features a maximum continuous drain current of 195A and a drain-source voltage rating of 60V, making it suitable for efficient power management across various industrial and electronic systems.

This MOSFET employs surface mount technology in a TO-263 package, allowing for compact PCB integration and effective thermal performance. It supports a low on-resistance (Rds(on)) of 2.4mΩ, significantly reducing conduction losses and enhancing overall energy efficiency in power distribution applications.

Designed to operate reliably in harsh environments, the component withstands ambient temperatures ranging from -55°C up to +175°C, ensuring stable performance under extreme thermal conditions. Its typical gate charge of 186nC enables precise and fast switching, critical for high-frequency applications.

The device offers robust avalanche and dynamic dV/dt ruggedness, providing dependable operation in demanding transient and pulse load scenarios. It can safely handle pulsed drain currents reaching up to 944A, making it versatile for many industrial and automation uses.

This MOSFET is an excellent choice for brushed and brushless DC motor drive circuits, half-bridge and full-bridge power converters, DC/AC inverters, and resonant power supplies. It also serves well as a redundant power switch in critical systems where reliability is paramount.

Supports high continuous drain current of 195 amperes for demanding loads. Low on-resistance of 2.4 milliohms reduces conduction losses for improved efficiency. Surface mount TO-263 package for compact and efficient heat dissipation.

Maximum power dissipation of 294 watts suitable for high power circuits. Operates reliably in ambient temperatures from -55°C up to +175°C. Typical gate charge of 186 nanocoulombs facilitates fast switching performance. Robust against avalanche and dynamic dV/dt stress for dependable operation.

Ideal for brushed and BLDC motor drive circuits, power converters, and inverters. Capable of handling pulsed drain currents up to 944 amperes for transient events. Designed for use in half-bridge, full-bridge topologies, and redundant power switching.

This product is manufactured in China and presented in the StrongIRFET series by Infineon.

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