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Infineon OptiMOS 3 N-Channel MOSFET 43 A 100 V Enhancement 3-Pin TO-220 IPP180N10N3GXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP180N10N3GXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 43A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 71W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed with OptiMOS 3 technology for low on-resistance of 33mΩ.
- Through hole mount type with 3-pin TO-220 package for easy integration.
- Supports enhancement mode channel operation with maximum gate source voltage ±20 V.
- Maximum power dissipation of 71 W ensures suitability for demanding industrial uses.
- Wide operating temperature range from -55°C to 175°C for reliable performance.
- Forward voltage of 1.2 V with typical gate charge of 19 nC at Vgs.
- No automotive standards compliance; suitable for general industrial and electronic applications.
Product Description
Infineon IPP180N10N3GXKSA1 is an OptiMOS 3 N-Channel MOSFET featuring a continuous drain current rating of 43 A and a maximum drain-to-source voltage of 100 V. Housed in a 3-pin TO-220 package with through hole mount, this device is engineered for efficient power switching in various industrial, electronic, and power management applications.
The transistor operates in enhancement mode and supports a maximum gate-to-source voltage of ±20 V, providing robust control and switching capabilities. With a low on-resistance of 33 milliohms, it delivers excellent conduction performance enhancing power efficiency.
The MOSFET can dissipate power up to 71 W, making it suitable for high-load environments. Its operation across a wide temperature range from -55°C to 175°C ensures reliable function under extreme conditions.
Additional electrical characteristics include a forward voltage of 1.2 V and a typical gate charge of 19 nC at the gate-source voltage, optimizing switching speeds and reducing energy losses.
Physical dimensions of the IPP180N10N3GXKSA1 are compact, with a length of 10.36 mm, a width of 4.57 mm, and a height of 15.95 mm, facilitating easy integration into circuit boards.
This MOSFET does not carry automotive-grade certification but remains an excellent choice for industrial electronics, power supplies, motor drives, and manufacturing equipment applications requiring high current and voltage handling capacity.
Designed with OptiMOS 3 technology for low on-resistance of 33mΩ. Through hole mount type with 3-pin TO-220 package for easy integration. Supports enhancement mode channel operation with maximum gate source voltage ±20 V.
Maximum power dissipation of 71 W ensures suitability for demanding industrial uses. Wide operating temperature range from -55°C to 175°C for reliable performance. Forward voltage of 1.2 V with typical gate charge of 19 nC at Vgs.
Compact dimensions: length 10.36 mm, width 4.57 mm, and height 15.95 mm. No automotive standards compliance; suitable for general industrial and electronic applications. Explore the range of Infineon MOSFET devices on EnvMart for enhanced performance and reliability in your electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPP180N10N3GXKSA1 is 43 A.
This model has a maximum drain-to-source voltage rating of 100 V.
The on-resistance of the IPP180N10N3GXKSA1 is 33 mΩ, which contributes to its efficient conduction performance.
It comes in a 3-pin TO-220 package and is designed for through hole mounting.
The maximum power dissipation for the Infineon IPP180N10N3GXKSA1 is 71 W.
This model operates within a wide temperature range from -55°C to 175°C.
The typical gate charge at Vgs for this MOSFET is 19 nC.
The forward voltage for the IPP180N10N3GXKSA1 is 1.2 V.
The maximum gate-to-source voltage for this model is ±20 V.
This MOSFET is suitable for general industrial and electronic applications, including power supplies and motor drives.
The physical dimensions are 10.36 mm in length, 4.57 mm in width, and 15.95 mm in height.
No, this model does not carry automotive standards compliance and is intended for general industrial use.
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