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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.7mm |
| Length | 6.7mm |
| Model | FDT1600N10ALZ |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.6A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 375mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 10.42W |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
onsemi FDT1600N10ALZ PowerTrench N-Channel MOSFET is an enhancement-mode transistor designed for efficient power switching applications. Featuring a continuous drain current of 5.6 A and a drain-source voltage rating of 100 V, this device is optimized for surface mount technology with its 4-pin SOT-223 package measuring 6.7 mm by 3.7 mm by 1.7 mm.
This MOSFET is part of the PowerTrench series, renowned for superior low Rds(on) performance with a maximum drain-source resistance of 375 milliohms, enabling reduced conduction losses and improved energy efficiency especially in switching power supplies and DC-DC converters.
Its maximum power dissipation of 10.42 W and operating temperature range from -55°C to 150°C allow reliable operation in harsh industrial, automotive, and consumer electronics environments. Typical gate charge of 2.9 nC at specified voltage ensures fast switching times, suitable for high-frequency switching applications.
Additional features include a maximum gate-source voltage rating of ±20 V to withstand transient voltages, and a forward voltage drop of 1.3 V optimizing conduction efficiency during operation. The device does not carry specific certifications or automotive standards but focuses on robust electrical and thermal characteristics.
onsemi's PowerTrench technology ensures this MOSFET is an excellent choice for power management, motor drivers, lighting systems, and other electronic devices requiring efficient switching in compact form factors. This product is new and designed for usage in industrial, automotive, and electronic component assembly.
This MOSFET features an enhancement-mode N-channel with a PowerTrench design for improved performance. It has a maximum drain-source resistance of 375 milliohms ensuring efficient switching. Maximum power dissipation capability is 10.42 W for reliable operation.
Operating temperature ranges from -55°C to 150°C for versatile environmental use. Typical gate charge at 2.9 nC allows fast switching speeds. The compact SOT-223 package dimensions are 6.7 mm length, 3.7 mm width, and 1.7 mm height.
Supports surface mount technology (SMT) for PCB assembly. Includes a maximum gate-source voltage of ±20 V and forward voltage of 1.3 V. Explore more semiconductor solutions and MOSFETs on EnvMart for your industrial and electronic applications.
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