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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FDPF2710T |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 42mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62.5W |
| Typical Gate Charge Qg @ Vgs | 78nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
onsemi FDPF2710T PowerTrench N-Channel MOSFET is a robust semiconductor device designed for power switching and amplification applications. Featuring a 25 Amp maximum continuous drain current and 250 Volt maximum drain-source voltage, it is suitable for diverse industrial, automotive, and electronic circuit needs.
This enhancement mode MOSFET utilizes PowerTrench technology to deliver low switching losses and high efficiency. Its 3-Pin TO-220 package supports through hole mounting, facilitating ease of integration in various printed circuit board designs.
The device is engineered to withstand harsh conditions, operating reliably from -55°C up to 150°C ambient temperature. It offers a low Rds(on) of 42 milliohms, minimizing conduction losses and improving energy efficiency in power circuits.
With a maximum power dissipation rating of 62.5 Watts and a typical forward voltage of 1.2 Volts, the FDPF2710T MOSFET supports demanding electronic loads and switching cycles. The typical gate charge of 78 nanocoulombs ensures responsive switching performance, beneficial in power management and motor control circuitry.
The compact physical size (16.07mm height, 10.36mm length, 4.9mm width) enables versatile use in both commercial and industrial electric systems including HVAC controls, power supplies, and automotive electronic modules.
This MOSFET features an enhancement mode channel type design. It supports through hole mounting with a compact TO-220 form factor. The device offers a low maximum drain-source resistance of 42 milliohms. It can dissipate up to 62.5 Watts of power safely.
The maximum gate-source voltage ranges from -30 to +30 Volts. The MOSFET operates efficiently within temperature ranges from -55°C to 150°C. The typical forward voltage is 1.2 Volts and typical gate charge is 78 nanocoulombs at the specified gate voltage.
Its physical dimensions are 16.07mm height, 10.36mm length, and 4.9mm width.
Explore more onsemi MOSFETs and discrete semiconductors for high performance, reliable power component needs in manufacturing, laboratory automation, and electronic system design at EnvMart.
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