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onsemi PowerTrench N-Channel MOSFET 64A 120V Enhancement Mode 8-Pin WDFN FDMS86202

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.05mm
Length 5.1mm
Model FDMS86202
Width 6.25mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type WDFN
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 64A
Maximum Drain Source Voltage Vds 120V
Maximum Drain Source Resistance Rds 13.2mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 156W
Typical Gate Charge Qg @ Vgs 45nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET features an enhancement channel mode with surface mount WDFN packaging.
  • Maximum continuous drain current is rated at 64 amperes ensuring high power handling.
  • Maximum drain-source voltage is 120 volts suitable for medium voltage applications.
  • It has low drain-source resistance of 13.2 milliohms for efficient conduction.
  • Offers a maximum power dissipation of 156 watts supporting demanding thermal conditions.
  • Operating temperature ranges from -55°C to +150°C supporting wide ambient conditions.
  • Designed with 8 pins in a compact 5.1mm x 6.25mm footprint and low profile height of 1.05mm.
  • Gate voltage tolerance spans -20V to +20V ensuring safe gate biasing margins.

Product Description

The onsemi FDMS86202 is a PowerTrench N-Channel MOSFET designed for industrial and electronic applications requiring robust performance. It delivers a high maximum continuous drain current of 64 amps and can withstand voltages up to 120 volts, implementing an enhancement mode channel. Housed in a compact 8-pin WDFN surface mount package, it measures 5.1mm in length, 6.25mm width, and only 1.05mm in height, suitable for space-constrained PCB layouts.

This MOSFET provides low on-resistance, specified at 13.2 milliohms, minimizing conduction losses and improving efficiency in power electronics circuits such as motor drives, DC-DC converters, and power management systems. The device supports a wide operating temperature range from -55°C to 150°C, making it reliable in harsh environments and extended industrial conditions.

It tolerates gate-source voltages from -20V to +20V and features a typical gate charge of 45nC, enabling fast switching speeds critical for high-frequency applications. The rated maximum power dissipation of 156 watts ensures the device can handle significant thermal loads when properly cooled. The forward voltage drop of 1.2 volts contributes to efficient power switching and load drive.

Being part of the PowerTrench series, this model delivers durability and performance consistency for manufacturing, HVAC, automotive electronics, and general industrial electronics. It is ideal for system designers requiring compact, high current MOSFET solutions with excellent thermal and electrical characteristics.

This MOSFET features an enhancement channel mode with surface mount WDFN packaging. Maximum continuous drain current is rated at 64 amperes ensuring high power handling. Maximum drain-source voltage is 120 volts suitable for medium voltage applications.

It has low drain-source resistance of 13.2 milliohms for efficient conduction. Offers a maximum power dissipation of 156 watts supporting demanding thermal conditions. Operating temperature ranges from -55°C to +150°C supporting wide ambient conditions.

Designed with 8 pins in a compact 5.1mm x 6.25mm footprint and low profile height of 1.05mm. Gate voltage tolerance spans -20V to +20V ensuring safe gate biasing margins. Typical gate charge is 45 nanocoulombs allowing fast switching responses.

Forward voltage drop is 1.2 volts optimizing efficiency in power conversion.

This product is suitable for applications in industrial control systems, power supplies, automotive electronics, HVAC equipment, and other electronic manufacturing uses. It represents a reliable choice within the semiconductor discrete device category for designers and engineers seeking proven MOSFET technology from onsemi.

Explore EnvMart's extensive catalog of power electronics components to find compatible products and complementary solutions in MOSFETs, power transistors, and related semiconductor devices to optimize your application requirements.

onsemi PowerTrench N-Channel MOSFET 64A 120V Enhancement Mode 8-Pin WDFN FDMS86202
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Frequently Asked Questions

The maximum continuous drain current for this model is rated at 64 amperes.

It can withstand a maximum drain-source voltage of 120 volts, making it suitable for medium voltage applications.

The device has a low drain-source resistance of 13.2 milliohms, which helps in minimizing conduction losses.

The maximum power dissipation for this model is 156 watts, allowing it to handle significant thermal loads when properly cooled.

This MOSFET is housed in an 8-pin WDFN package with dimensions of 5.1mm in length, 6.25mm in width, and a height of 1.05mm.

It operates within a temperature range of -55°C to +150°C, making it suitable for various ambient conditions.

The typical gate charge is 45 nanocoulombs, enabling fast switching speeds essential for high-frequency applications.

The forward voltage drop is 1.2 volts, which contributes to efficient power switching and load drive.

It has a gate voltage tolerance that spans from -20V to +20V, ensuring safe gate biasing margins.

This model features a surface mount type, suitable for compact PCB layouts.

It is suitable for applications in industrial control systems, power supplies, automotive electronics, and HVAC equipment.

This device is part of the PowerTrench series, designed for robust performance in electronic applications.

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