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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5.1mm |
| Model | FDMS86202 |
| Width | 6.25mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 64A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 13.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 156W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
The onsemi FDMS86202 is a PowerTrench N-Channel MOSFET designed for industrial and electronic applications requiring robust performance. It delivers a high maximum continuous drain current of 64 amps and can withstand voltages up to 120 volts, implementing an enhancement mode channel. Housed in a compact 8-pin WDFN surface mount package, it measures 5.1mm in length, 6.25mm width, and only 1.05mm in height, suitable for space-constrained PCB layouts.
This MOSFET provides low on-resistance, specified at 13.2 milliohms, minimizing conduction losses and improving efficiency in power electronics circuits such as motor drives, DC-DC converters, and power management systems. The device supports a wide operating temperature range from -55°C to 150°C, making it reliable in harsh environments and extended industrial conditions.
It tolerates gate-source voltages from -20V to +20V and features a typical gate charge of 45nC, enabling fast switching speeds critical for high-frequency applications. The rated maximum power dissipation of 156 watts ensures the device can handle significant thermal loads when properly cooled. The forward voltage drop of 1.2 volts contributes to efficient power switching and load drive.
Being part of the PowerTrench series, this model delivers durability and performance consistency for manufacturing, HVAC, automotive electronics, and general industrial electronics. It is ideal for system designers requiring compact, high current MOSFET solutions with excellent thermal and electrical characteristics.
This MOSFET features an enhancement channel mode with surface mount WDFN packaging. Maximum continuous drain current is rated at 64 amperes ensuring high power handling. Maximum drain-source voltage is 120 volts suitable for medium voltage applications.
It has low drain-source resistance of 13.2 milliohms for efficient conduction. Offers a maximum power dissipation of 156 watts supporting demanding thermal conditions. Operating temperature ranges from -55°C to +150°C supporting wide ambient conditions.
Designed with 8 pins in a compact 5.1mm x 6.25mm footprint and low profile height of 1.05mm. Gate voltage tolerance spans -20V to +20V ensuring safe gate biasing margins. Typical gate charge is 45 nanocoulombs allowing fast switching responses.
Forward voltage drop is 1.2 volts optimizing efficiency in power conversion.
This product is suitable for applications in industrial control systems, power supplies, automotive electronics, HVAC equipment, and other electronic manufacturing uses. It represents a reliable choice within the semiconductor discrete device category for designers and engineers seeking proven MOSFET technology from onsemi.
Explore EnvMart's extensive catalog of power electronics components to find compatible products and complementary solutions in MOSFETs, power transistors, and related semiconductor devices to optimize your application requirements.
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