onsemi PowerTrench N-Channel MOSFET 12 A 150 V Enhancement Mode 8-Pin WDFN FDMS86252L

onsemi FDMS86252L is a PowerTrench N-Channel MOSFET specifically designed for efficient power switching applications. It offers a maximum continuous drain current of 12 A and can handle drain-source voltages up to 150 V, making it suitable for power management in electronic circuits.

This enhancement mode MOSFET comes in a compact 8-pin WDFN package, which measures 5 mm in length, 5.85 mm in width, and 1.05 mm in height. The surface-mount design facilitates integration into densely packed PCBs.

The device features a low maximum drain-source on-resistance of 110 milliohms, improving energy efficiency and reducing heat generation in operation. Its maximum power dissipation is rated at 50 watts, allowing it to handle heavy loads in industrial and consumer electronic devices.

It operates safely over a broad temperature range from -55°C up to 150°C, providing reliability in harsh or demanding environments. The MOSFET supports a maximum gate-source voltage of ±20 V, enabling flexible gate drive strategies.

The typical gate charge at 15 V gate-to-source voltage is 15 nanocoulombs, ensuring fast switching speeds for improved performance in switching power supplies, motor drives, and other applications requiring efficient transistor switching.

Applications include industrial power control, power supplies, consumer electronics, automotive electronics excluding automotive standard usage, and other areas where robust and compact power MOSFETs are required.

This MOSFET features a low drain-source resistance of 110 milliohms for efficient power management. It operates in enhancement channel mode suitable for switching and amplification. Maximum power dissipation is rated at 50 watts, ensuring high performance under load.

The device supports a maximum gate-source voltage range from -20 V to +20 V for flexible control. Compact package dimensions are 5 mm length, 5.85 mm width, and 1.05 mm height for space-saving PCB design. Operates reliably over a wide temperature range from -55°C to 150°C for harsh environments.

Typical gate charge is 15 nanocoulombs at 15 V gate-source voltage, allowing fast switching. Designed for surface mount applications enhancing manufacturing efficiency. Forward voltage drop is low at 1.2 V, reducing losses in conduction mode.

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