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onsemi PowerTrench N-Channel MOSFET 130 A, 150 V, Enhancement Mode, 3-Pin TO-263 FDB075N15A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FDB075N15A |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 130A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 7.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 333W |
| Typical Gate Charge Qg @ Vgs | 77nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
Key Features
- Rated for a maximum continuous drain current of 130 amperes ensuring high current handling capacity.
- Supports a maximum drain-source voltage of 150 volts suitable for medium voltage applications.
- Features a low maximum drain-source resistance of 7.5 milliohms facilitating efficient conduction.
- Operates efficiently with a forward voltage of 1.25 volts and a maximum power dissipation of 333 watts.
- Designed to withstand operating temperatures ranging from -55°C to 175°C, ensuring reliability in harsh environments.
- Compact footprint with dimensions 10.67mm length, 9.65mm width, and 4.83mm height for optimized PCB integration.
- Incorporates a typical gate charge of 77 nanocoulombs at gate voltage of 7 volts enabling fast switching.
- Supports a maximum gate-source voltage of -20 to +20 volts to prevent device damage.
Product Description
onsemi FDB075N15A is a PowerTrench® N-Channel MOSFET designed for high current and voltage applications. With a maximum continuous drain current of 130 amps and a maximum drain-source voltage of 150 volts, this MOSFET provides efficient power switching and control in power electronics.
Its enhancement-mode channel and low drain-source resistance (7.5mΩ) result in superior efficiency and reduced conduction losses. The device supports a maximum power dissipation of 333 watts, making it suitable for demanding applications.
The package type is TO-263, designed for surface mounting with 3 pins, enabling compact designs and reliable thermal management. Its operating temperature range from -55°C to 175°C ensures operation in extreme industrial or commercial environments.
The FDB075N15A's typical gate charge of 77nC at Vgs=7V, along with a gate-source voltage tolerance of ±20V, ensures fast switching and robustness against voltage spikes.
This MOSFET is commonly used in industrial power management, motor control, audio amplifiers, DC-DC converters, and other high-efficiency power switching applications in industrial, manufacturing, and electronic component fields.
Rated maximum continuous drain current of 130A guarantees high power handling. Low Rds(on) of 7.5 milliohm reduces power losses during operation. Robust operating temperature span from -55°C to 175°C ensures durability. Compact TO-263 surface mount package optimizes PCB space.
Compatible with high-speed switching due to low gate charge. Supports wide gate-source voltage for enhanced safety margins.
Choose the onsemi FDB075N15A PowerTrench MOSFET for reliable, high-performance switching in a wide range of electronic and industrial power applications. Explore more discrete semiconductors and MOSFET options at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 130 amperes, which ensures high current handling capacity.
It supports a maximum drain-source voltage of 150 volts, making it suitable for medium voltage applications.
The maximum drain-source resistance is 7.5 milliohms, which facilitates efficient conduction.
This MOSFET operates efficiently within a temperature range of -55°C to 175°C, ensuring reliability in harsh environments.
The typical gate charge is 77 nanocoulombs at a gate voltage of 7 volts, enabling fast switching capabilities.
It supports a maximum power dissipation of 333 watts, suitable for demanding applications.
The dimensions of the TO-263 package are 10.67mm in length, 9.65mm in width, and 4.83mm in height.
This model features a pin count of 3, designed for surface mounting.
The maximum gate-source voltage is ±20 volts, which helps prevent device damage.
This MOSFET is commonly used in industrial power management, motor control, audio amplifiers, and DC-DC converters.
It features an enhancement-mode N-channel design, which is typical for high-efficiency power switching applications.
The forward voltage drop is 1.25 volts, which is relevant for its operation in power applications.
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