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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.75mm |
| Length | 3.3mm |
| Model | FDMC8327L |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 14.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 18.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
onsemi FDMC8327L PowerTrench N-Channel MOSFET is a discrete semiconductor optimized for power and efficiency in modern electronic circuits requiring controlled switching with high current capacity and moderate voltage ratings. It supports a continuous drain current of 14 amperes and withstands a maximum drain-source voltage of 40 volts.
Featuring an Enhancement mode channel and packaged in an 8-pin WDFN surface mount case, this MOSFET is designed for compact, automated installation on printed circuit boards. It offers a maximum power dissipation of 30 watts to maintain thermal stability during high load operations.
The device operates reliably across a wide temperature range from -55°C, suitable for demanding industrial or consumer electronics environments, up to 150°C. The typical gate charge of 18.5 nC at Vgs ensures fast switching capabilities, reducing switching losses in power management applications.
Physical measurements of 3.3 mm by 3.3 mm by 0.75 mm make it suitable for space-constrained applications, while the maximum gate-source voltage rating of -20 to +20 volts ensures robust electrical isolation of the gate drive.
No special automotive or other regulatory approvals are indicated for this model. This Enhancement mode MOSFET features low drain-source resistance of 14.5 mΩ for enhanced efficiency. The device comes in a compact 8-pin WDFN package suitable for space-constrained circuit designs.
Maximum power dissipation rating of 30 watts supports robust performance under load. Operational temperature range extends from -55°C to 150°C, ensuring reliability in harsh environments. Typical gate charge is 18.5 nC at Vgs, optimizing high-speed switching performance.
Maximum gate-source voltage tolerance is -20 to +20 volts, providing stable gate control. Physical dimensions include 3.3 mm length, 3.3 mm width, and 0.75 mm height for compact integrated circuits. No automotive or other industry specific certifications are specified for this product.
This MOSFET is ideal for industrial electronics, power management circuits, consumer electronics, and other applications where compact, high-current surface-mount transistors are required. Explore additional semiconductor and MOSFET components on EnvMart to meet your project and manufacturing needs.
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